SCHEMBL28641990

SCHEMBL28641990

COCc1ccc(OC(=O)c2ccc(COC)cc2)cc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 5/20 0.50
SMN1; SMN2 Q16637 4/20 0.50
MEN1 O00255 3/20 0.50
MAPT P10636 3/20 0.50
NPC1 O15118 3/20 0.50
RAB9A P51151 3/20 0.50
LMNA P02545 1/20 0.50
CYP1A2 P05177 1/20 0.50
CYP2C9 P11712 1/20 0.50
CYP2C19 P33261 1/20 0.50
PRSS1 P07477 5/20 0.49
F2 P00734 2/20 0.49
PRSS2 P07478 2/20 0.49
PRSS3 P35030 2/20 0.49
HSD17B10 Q99714 1/20 0.48
ACR P10323 3/20 0.47
HGFAC Q04756 1/20 0.47
GFER P55789 1/20 0.47
POLB P06746 1/20 0.47
RXRA P19793 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14016992 0.95 SMN1; SMN2 (0.58) KMT2ASMN1; SMN2MEN1MAPTNPC1
SCHEMBL24157605 0.91 KMT2A (0.57) KMT2ASMN1; SMN2MEN1MAPTRAB9A
SCHEMBL12736330 0.91 TP53 (0.52) KMT2ASMN1; SMN2MEN1MAPTNPC1
SCHEMBL8727871 0.88 KMT2A (0.50) KMT2ASMN1; SMN2MEN1MAPTNPC1
SCHEMBL12736333 0.87 MAPT (0.50) KMT2ASMN1; SMN2MEN1MAPTNPC1
SCHEMBL12736337 0.87 MAPT (0.50) KMT2ASMN1; SMN2MEN1MAPTNPC1
SCHEMBL12736310 0.87 MAPT (0.56) KMT2ASMN1; SMN2MEN1MAPTNPC1
SCHEMBL12736340 0.87 MAPT (0.59) KMT2ASMN1; SMN2MEN1MAPTNPC1
SCHEMBL12736318 0.84 RAB9A (0.53) MAPTRAB9ALMNACYP1A2PRSS1
SCHEMBL25503618 0.83 SMN1; SMN2 (0.71) KMT2ASMN1; SMN2MEN1MAPTNPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113820920-B Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device 旭化成株式会社 2023-07-04 CN disclosed
CN-113820920-A Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device 旭化成株式会社 2021-12-21 CN disclosed
CN-107850844-B Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device 旭化成株式会社 2021-09-07 CN disclosed