SCHEMBL2870779

SCHEMBL2870779

Cc1cc(S(=O)(=O)O)c(C)c(C)c1C

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
BRD4 O60885 2/20 0.36
MYC P01106 1/20 0.34
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
RAPGEF4 Q8WZA2 1/20 0.33
TP53 P04637 1/20 0.33
CREBBP Q92793 1/20 0.33
TSHR P16473 1/20 0.33
POLB P06746 2/20 0.33
RECQL P46063 2/20 0.33
SUMO2 P61956 1/20 0.33
SUMO1 P63165 1/20 0.33
SENP7 Q9BQF6 1/20 0.33
SENP3 Q9H4L4 1/20 0.33
SENP2 Q9HC62 1/20 0.33
SENP1 Q9P0U3 1/20 0.33
ESR2 Q92731 1/20 0.33
ALDH1A1 P00352 5/20 0.33
GAA P10253 3/20 0.32
FABP4 P15090 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ammonia Solution, Strong SCHEMBL28258947 0.98 BRD4 (0.35) BRD4MYCMEN1KMT2ARAPGEF4
SCHEMBL29372341 0.82 BRD4 (0.45) BRD4MEN1KMT2ATP53CREBBP
SCHEMBL15033917 0.82 BRD4 (0.41) BRD4MYCMEN1KMT2ATP53
SCHEMBL10536227 0.82 BRD4 (0.45) BRD4MEN1KMT2ATP53CREBBP
SCHEMBL2032295 0.80 SENP2 (0.40) BRD4MEN1KMT2ARAPGEF4TP53
SCHEMBL29162279 0.80 RAPGEF4 (0.40) MEN1KMT2ARAPGEF4TSHRALDH1A1
SCHEMBL8469963 0.79 BRD4 (0.48) BRD4MYCMEN1KMT2ARAPGEF4
SCHEMBL2884819 0.79 CA1 (0.42) BRD4MYCMEN1KMT2ARAPGEF4
SCHEMBL28209445 0.79 CYP3A4 (0.33) BRD4MYCMEN1KMT2ATP53
SCHEMBL2051094 0.78 RAPGEF4 (0.34) MEN1KMT2ARAPGEF4TSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103503121-B Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method for manufacturing same, and solar cell element and method for manufacturing same 日立化成株式会社 2017-04-12 CN disclosed
US-9406834-B2 Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same HITACHI CHEMICAL COMPANY, LTD. (JP) 2016-08-02 US disclosed
CN-105714411-A Preparation method of polypyrrolone/polyethersulfone/carbon nano tube tri-element composite 江西师范大学 2016-06-29 CN disclosed
CN-105419533-A Coating combination and preparation method thereof SHAANXI DINGXIN NEW MAT TECH CO LTD 2016-03-23 CN disclosed
CN-105369253-A Anti-punching aluminum chemical polishing additive and application thereof SHANGHAI LVTONG CHEMICAL TECH CO LTD 2016-03-02 CN disclosed
US-20140242741-A1 MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME HITACHI CHEMICAL COMPANY, LTD. (JP) 2014-08-28 US disclosed
US-8748877-B2 Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same HITACHI CHEMICAL COMPANY, LTD. (JP) 2014-06-10 US disclosed
US-20120313199-A1 MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME HITACHI CHEMICAL COMPANY, LTD. 2012-12-13 US disclosed
US-7754844-B2 Polyarylene ether compound containing sulfonic acid group, composition containing same, and method for manufacturing those TOYO BOSEKI KABUSHIKI KAISHA (JP) 2010-07-13 US disclosed
EP-1561768-B1 POLYARYLENE ETHER COMPOUND CONTAINING SULFONIC ACID GROUP, COMPOSITION CONTAINING SAME, AND METHOD FOR MANUFACTURING THOSE TOYO BOSEKI (JP) 2009-09-30 EP disclosed
CN-1292015-C Polyarylene ether compound containing sulfonic acid group, composition containing same, and method for manufacturing those TOYO BOSEKI (JP) 2006-12-27 CN disclosed
US-20060166048-A1 Polyarylene ether compound containing sulfonic acid group, composition containing same, and method for manufacturing those TOYO BOSEKI KABUSHIKI KAISHA (JP) 2006-07-27 US disclosed
CN-1703443-A Polyarylene ether compound containing sulfonic acid group, composition containing the same, and method for producing the same TOYO BOSEKI (JP) 2005-11-30 CN disclosed
EP-1561768-A1 POLYARYLENE ETHER COMPOUND CONTAINING SULFONIC ACID GROUP, COMPOSITION CONTAINING SAME, AND METHOD FOR MANUFACTURING THOSE Toyo Boseki Kabushiki Kaisha (JP) 2005-08-10 EP disclosed
US-5596128-A SULFONATION WITHOUT A CATALYST IN THE PRESENCE OF SOLVENT KONISHI CHEMICAL IND. CO., LTD. (JP) 1997-01-21 US disclosed
EP-0505582-B1 SULFONATING AGENT AND PROCESS KONISHI CHEM IND (JP) 1996-07-31 EP disclosed
EP-0505582-A1 SULFONATING AGENT AND PROCESS KONISHI CHEMICAL IND. CO., LTD. (JP) 1992-09-30 EP disclosed
US-3985797-A Hydroxylation of aromatic compounds UOP INC. (US) 1976-10-12 US disclosed
US-3985796-A Hydroxylation of aromatic compounds UOP INC. (US) 1976-10-12 US disclosed
US-3931295-A Hydroxylation of aromatic compounds UNIVERSAL OIL PRODUCTS COMPANY (US) 1976-01-06 US disclosed