SCHEMBL2876002

SCHEMBL2876002

CC(C)(C)c1ccccc1I

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.50
TDP1 Q9NUW8 2/20 0.50
TSHR P16473 1/20 0.50
CA2 P00918 1/20 0.46
GABRA1 P14867 1/20 0.39
GABRB2 P47870 1/20 0.39
KIF11 P52732 1/20 0.38
SIGMAR1 Q99720 3/20 0.34
NPSR1 Q6W5P4 1/20 0.33
ALOX12 P18054 2/20 0.32
GRIN2D O15399 1/20 0.32
GRIN3B O60391 1/20 0.32
GRIN1 Q05586 1/20 0.32
GRIN2A Q12879 1/20 0.32
GRIN2B Q13224 1/20 0.32
GRIN2C Q14957 1/20 0.32
GRIN3A Q8TCU5 1/20 0.32
ATM Q13315 1/20 0.32
CYP1A2 P05177 2/20 0.32
ALOX15 P16050 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29720793 1.00 ALDH1A1 (0.50) ALDH1A1TDP1TSHRCA2GABRA1
Water SCHEMBL722703 0.97 ALDH1A1 (0.48) ALDH1A1TDP1TSHRCA2GABRA1
SCHEMBL27672332 0.91 ALDH1A1 (0.43) ALDH1A1TDP1TSHRCA2GABRA1
Acetic Acid SCHEMBL27880107 0.87 ALDH1A1 (0.45) ALDH1A1TDP1TSHRCA2GABRA1
SCHEMBL27611791 0.85 ALDH1A1 (0.39) ALDH1A1TDP1TSHRCA2GABRA1
SCHEMBL26291366 0.81 ALDH1A1 (0.37) ALDH1A1TDP1TSHRCA2SIGMAR1
SCHEMBL21798723 0.80 ALDH1A1 (0.43) ALDH1A1TDP1TSHRCA2GABRA1
Trifluoromethanesulfonic Acid SCHEMBL2483807 0.80 TSHR (0.44) ALDH1A1TDP1TSHRCA2GABRA1
Trifluoromethanesulfonic Acid SCHEMBL7535106 0.80 TSHR (0.44) ALDH1A1TDP1TSHRCA2GABRA1
SCHEMBL18242130 0.79 ALDH1A1 (0.36) ALDH1A1TDP1TSHRCA2SIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 342 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117659420-A Zn-based organic coordination nano-particle, photoresist composition, and preparation method and application thereof 清华大学 2024-03-08 CN claimed
CN-114414711-B Identification method of onium salt photoacid generator in photoresist 北京彤程创展科技有限公司 2023-10-13 CN claimed
CN-116836389-A Low-temperature-curable positive photosensitive resin, resin composition, preparation method and application thereof 明士(北京)新材料开发有限公司 2023-10-03 CN claimed
CN-112209866-B Method for preparing 1-tertiary butyl-3, 3-dimethyl indoline compound 同济大学 2023-06-16 CN claimed
CN-115027123-B Antistatic CTP plate and preparation method thereof 安徽强邦新材料股份有限公司 2023-06-13 CN claimed
CN-114414711-A Method for identifying onium salt type photoacid generator in photoresist 北京彤程创展科技有限公司 2022-04-29 CN claimed
CN-112209866-A Method for preparing 1-tert-butyl-3, 3-dimethyl indoline compound 同济大学 2021-01-12 CN claimed
CN-101288027-B Low activation energy dissolution modification agents for photoresist applications IBM 2014-12-10 CN claimed
CN-101959686-B Sensitizer/initiator composition for negative-working thermally sensitive compositions useful for lithographic printing plates EASTMAN KODAK CO 2013-03-20 CN claimed
CN-101454722-B Negative-working radiation-sensitive compositions and imageable materials EASTMAN KODAK CO 2012-07-04 CN claimed
CN-101427181-B Wet developable bottom antireflective coating composition and method of use IBM 2012-03-21 CN claimed
CN-101959686-A Sensitizer/initiator composition for negative-working thermally sensitive compositions useful for lithographic printing plates EASTMAN KODAK CO 2011-01-26 CN claimed
CN-100561344-C Have improve etch resistant properties fluoridize the photoresist material IBM (US) 2009-11-18 CN claimed
CN-101454722-A Negative-working radiation-sensitive compositions and imageable materials EASTMAN KODAK CO (US) 2009-06-10 CN claimed
CN-101288027-A Low activation energy dissolution modification agents for photoresist applications IBM (US) 2008-10-15 CN claimed
CN-1846169-A Negative resist composition with fluorosulfonamide-containing polymer IBM (US) 2006-10-11 CN claimed
CN-1782876-A Fluorinated photoresist materials with improved etch resistant properties IBM (US) 2006-06-07 CN claimed
CN-1637603-A Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use IBM (US) 2005-07-13 CN claimed
CN-1615458-A Negative deep ultraviolet photoresist CLARIANT FINANCE BVI LTD (VG) 2005-05-11 CN claimed
US-5498765-A Positive photoresist composition containing photoacid generator and use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1996-03-12 US claimed