Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 2/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.44 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.44 |
| ▸ | HSD11B1 | P28845 | 4/20 | 0.41 |
| ▸ | CA2 | P00918 | 2/20 | 0.36 |
| ▸ | MEN1 | O00255 | 2/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.34 |
| ▸ | RBP4 | P02753 | 1/20 | 0.33 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.33 |
| ▸ | CA1 | P00915 | 1/20 | 0.33 |
| ▸ | CA5A | P35218 | 1/20 | 0.33 |
| ▸ | CA9 | Q16790 | 1/20 | 0.33 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.32 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.32 |
| ▸ | SLC22A12 | Q96S37 | 1/20 | 0.32 |
| ▸ | PTPN5 | P54829 | 1/20 | 0.32 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.32 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.32 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL7535106 | 1.00 | TSHR (0.44) | TSHRALDH1A1TDP1HSD11B1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL8736614 | 0.87 | ALDH1A1 (0.39) | TSHRALDH1A1TDP1HSD11B1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL2228760 | 0.85 | MEN1 (0.40) | TSHRALDH1A1HSD11B1CA2MEN1 | |
| Trifluoromethanesulfonic Acid SCHEMBL1286190 | 0.85 | CA2 (0.37) | TSHRALDH1A1TDP1HSD11B1CA2 | |
| SCHEMBL5826443 | 0.84 | HSD11B1 (0.39) | TSHRALDH1A1TDP1HSD11B1CA2 | |
| SCHEMBL28681870 | 0.83 | CA2 (0.38) | TSHRALDH1A1TDP1HSD11B1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL8736613 | 0.83 | PTPN1 (0.39) | TSHRALDH1A1TDP1HSD11B1CA2 | |
| SCHEMBL5826458 | 0.83 | CA2 (0.38) | TSHRALDH1A1TDP1HSD11B1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL10667371 | 0.82 | PTPN1 (0.33) | ALDH1A1HSD11B1CA2MEN1KMT2A | |
| SCHEMBL4424690 | 0.81 | TSHR (0.55) | TSHRALDH1A1TDP1HSD11B1CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7153630-B2 | Resist with reduced line edge roughness | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2006-12-26 | — | — | US | claimed |
| US-20060078820-A1 | Resist with reduced line edge roughness | MASS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2006-04-13 | — | — | US | claimed |
| EP-0990625-B1 | Vinyl ether-based optical fiber coatings | LUCENT TECHNOLOGIES INC (US) | 2003-12-10 | — | — | EP | claimed |
| US-20030036015-A1 | Resist with reduced line edge roughness | AIR FORCE, UNITED STATES | 2003-02-20 | — | — | US | claimed |
| WO-2002091084-A2 | RESIST WITH REDUCED LINE EDGE ROUGHNESS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-11-14 | — | — | WO | claimed |
| EP-0990625-A1 | Vinyl ether-based optical fiber coatings | Lucent Technologies Inc. (US) | 2000-04-05 | — | — | EP | claimed |
| EP-1653285-B1 | Evaluation method of resist composition using immersion solvent | TOKYO OHKA KOGYO CO LTD (JP) | 2015-05-27 | — | — | EP | disclosed |
| US-8198004-B2 | Resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-12 | — | — | US | disclosed |
| EP-1653284-B1 | Evaluation method of resist composition based on sensitivity | TOKYO OHKA KOGYO CO LTD (JP) | 2011-11-02 | — | — | EP | disclosed |
| EP-1589375-B1 | RESIST COMPOSITION | TOKYO OHKA KOGYO CO LTD (JP) | 2011-10-19 | — | — | EP | disclosed |
| US-7541138-B2 | Resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-02 | — | — | US | disclosed |
| US-20090130605-A1 | RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-05-21 | — | — | US | disclosed |
| US-7527909-B2 | Evaluation of suitability of a resist composition as a positive or negative resist composition used in a resist pattern formation method involving an immersion exposure step, which is resistant to the deleterious effects of the solvent used; excellent sensitivity and resist pattern profile | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-05-05 | — | — | US | disclosed |
| EP-1653284-A2 | Evaluation method of resist composition based on sensitivity | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-05-03 | — | — | EP | disclosed |
| EP-1653285-A2 | Evaluation method of resist composition using immersion solvent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-05-03 | — | — | EP | disclosed |
| EP-1610178-A1 | RESIST COMPOSITION FOR LIQUID IMMERSION EXPOSURE PROCESS AND METHOD OF FORMING RESIST PATTERN THEREWITH | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-12-28 | — | — | EP | disclosed |
| EP-1596251-A1 | IMMERSION EXPOSURE PROCESS-USE RESIST PROTECTION FILM FORMING MATERIAL, COMPOSITE FILM, AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-11-16 | — | — | EP | disclosed |
| EP-1589375-A1 | RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-10-26 | — | — | EP | disclosed |
| US-20050014090-A1 | immersion lithography; sensitivity; using mixture of (meth0acrylate ester and acid generator | TOKYO OHKA KOGYO CO., LTD. | 2005-01-20 | — | — | US | disclosed |
| US-20020015906-A1 | Polymer for photoresist, method of production thereof and photoresist composition containing polymer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-02-07 | — | — | US | disclosed |