Ethylene Glycol

Ethylene Glycol

SCHEMBL2878574

CC(C)(C)OC(C)(C)C.COC.OCCO

nearest known ligand 0.35

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Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.35
TSHR P16473 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ethylene Glycol SCHEMBL231666 0.93 TSHR (0.39) ALDH1A1TSHR
Ethylene Glycol SCHEMBL17199782 0.90 TSHR (0.36) ALDH1A1TSHR
Ethylene Glycol SCHEMBL7195215 0.90 TSHR (0.36) ALDH1A1TSHR
Di(Hydroxyethyl)Ether SCHEMBL9183213 0.83 TSHR (0.53) ALDH1A1TSHR
Methoxymethane SCHEMBL8323899 0.82 ALDH1A1 (0.50) ALDH1A1TSHR
1,3-Propanediol SCHEMBL7190458 0.80 ALDH1A1 (0.37) ALDH1A1TSHR
Ether SCHEMBL2878641 0.79 ALDH1A1 (0.46) ALDH1A1
Acetic Acid SCHEMBL2254617 0.79 FFAR3 (0.39) ALDH1A1TSHR
Ethylene Glycol SCHEMBL3818428 0.79
Ethylene Glycol SCHEMBL78968 0.79

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2479611-B1 Chemically amplified positive resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2014-10-15 EP disclosed
EP-2479611-A2 Chemically amplified positive resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2012-07-25 EP disclosed
US-20120184100-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
EP-1324134-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2010-10-20 EP disclosed
US-20050079443-A1 Radiation-sensitive polymer composition and pattern forming method using the same SHIN-ETSU CHEMICAL CO., LTD. 2005-04-14 US disclosed
US-6866982-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-15 US disclosed
US-6635400-B2 Alkali-insoluble polymer having acidic groups protected with acid labile groups, photoacid generator, and 1,2-naphthoquinonediazidosulfonyl group-bearing compound; high resolution; plating resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-10-21 US disclosed
US-20030175617-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-18 US disclosed
EP-1324134-A2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-07-02 EP disclosed
US-20010044066-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-22 US disclosed