Ether

Ether

SCHEMBL2878645

CC(C)(C)OCCO.CCOCC

nearest known ligand 0.55

Full drug profile on Sugi Atlas →

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.55
CYP4F2 P78329 1/20 0.39
CYP4A11 Q02928 1/20 0.39
TSHR P16473 3/20 0.37
MAPK1 P28482 2/20 0.36
MEN1 O00255 2/20 0.35
KMT2A Q03164 2/20 0.35
THRB P10828 1/20 0.33
HTT P42858 1/20 0.33
MAPT P10636 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL35822 0.87
Di(Hydroxyethyl)Ether SCHEMBL8528937 0.85 ALDH1A1 (0.50) ALDH1A1CYP4F2CYP4A11TSHRMAPK1
Fluoride SCHEMBL1629162 0.84
Ethylene Glycol SCHEMBL27616494 0.84 MAPK1 (0.38) ALDH1A1CYP4F2CYP4A11TSHRMAPK1
SCHEMBL27974695 0.84
SCHEMBL28041169 0.84
Potassium SCHEMBL31590863 0.84
Di(Hydroxyethyl)Ether SCHEMBL8586098 0.82 MEN1 (0.57) ALDH1A1CYP4F2CYP4A11TSHRMAPK1
SCHEMBL28528977 0.81 MAPK1 (0.36) ALDH1A1CYP4F2CYP4A11TSHRMAPK1
Methoxymethane SCHEMBL2878577 0.81 MAPK1 (0.36) ALDH1A1CYP4F2CYP4A11TSHRMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107074894-A Metal complex and light-emitting element using same 住友化学株式会社 2017-08-18 CN disclosed
EP-2479611-B1 Chemically amplified positive resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2014-10-15 EP disclosed
EP-2479611-A2 Chemically amplified positive resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2012-07-25 EP disclosed
US-20120184100-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
EP-1324134-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2010-10-20 EP disclosed
US-20050079443-A1 Radiation-sensitive polymer composition and pattern forming method using the same SHIN-ETSU CHEMICAL CO., LTD. 2005-04-14 US disclosed
US-6866982-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-15 US disclosed
US-6635400-B2 Alkali-insoluble polymer having acidic groups protected with acid labile groups, photoacid generator, and 1,2-naphthoquinonediazidosulfonyl group-bearing compound; high resolution; plating resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-10-21 US disclosed
US-20030175617-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-18 US disclosed
EP-1324134-A2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-07-02 EP disclosed
US-20010044066-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-22 US disclosed
US-6030746-A CHEMICALLY AMPLIFIED POSITIVE RESIST COMPRISES A ORGANIC SOLVENT, AN ALKALI SOLUBLE RESIN, A PHOTOACID GENERATOR AND A DISSOLUTION RATE REGULATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-02-29 US disclosed
US-5972559-A A PHOTORESIST MIXTURE COMPRISING AN ORGANIC SOLVENT, A COPOLYCARBONS BASE RESIN, A PHOTOACID GENERATOR, AND AN AROMATIC ALKYLENE CARBOXYLIC ACID COMPOUND; FOR IMPROVING THE FOOTING ON NITRIDE FILM SUBSTRATES AND POST EXPOSURE DELAY SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-10-26 US disclosed
US-5876900-A POLYHYDROXYSTYRENE POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-02 US disclosed