⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9176874 | 0.83 | — | — | |
| SCHEMBL3414541 | 0.80 | — | — | |
| SCHEMBL3414547 | 0.80 | — | — | |
| SCHEMBL18987229 | 0.78 | — | — | |
| SCHEMBL249129 | 0.78 | — | — | |
| SCHEMBL2023964 | 0.78 | — | — | |
| Ethylene SCHEMBL27762520 | 0.77 | — | — | |
| SCHEMBL17474255 | 0.77 | — | — | |
| SCHEMBL5858227 | 0.75 | — | — | |
| SCHEMBL6562275 | 0.74 | L3MBTL1 (0.34) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20130157450-A1 | Methods of Forming Metal Silicide Regions on Semiconductor Devices | GLOBALFOUNDRIES INC. (KY) | 2013-06-20 | — | — | US | claimed |
| US-7045457-B2 | Film forming material, film forming method, and silicide film | TRI CHEMICAL LABORATORES INC. (JP) | 2006-05-16 | — | — | US | claimed |
| US-20050059243-A1 | Film forming material, film forming method, and silicide film | TRI CHEMICAL LABORATORIES INC. (JP) | 2005-03-17 | — | — | US | claimed |
| US-20260088258-A1 | EDGE EXCLUSION CONTROL | LAM RES CORP (US) | 2026-03-26 | — | — | US | disclosed |
| US-12544749-B2 | Method for preparing single-atom, atomic cluster or single-molecular catalyst for oxidative coupling of methane using chemical vapor deposition | KOREA INSTITUTE OF ENERGY RESEARCH (KR) | 2026-02-10 | — | — | US | disclosed |
| US-12531210-B2 | Edge exclusion control | LAM RESEARCH CORPORATION (US) | 2026-01-20 | — | — | US | disclosed |
| US-12509768-B2 | Method of manufacturing semiconductor device, substrate processing apparatus and evaporation system | Kokusai Electric Corporation (JP) | 2025-12-30 | — | — | US | disclosed |
| US-20250314008-A1 | Ceramic-Polymer Composites and Methods of Making the Same | TEMPLE UNIVERSITY OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION | 2025-10-09 | — | — | US | disclosed |
| US-20250029840-A1 | MOLYBDENUM DEPOSITION | LAM RES CORP (US) | 2025-01-23 | — | — | US | disclosed |
| US-12148623-B2 | Deposition of tungsten on molybdenum templates | LAM RESEARCH CORPORATION (US) | 2024-11-19 | — | — | US | disclosed |
| US-20240351880-A1 | METHOD FOR PREPARING SINGLE-WALLED CARBON NANOTUBES USING SINGEL-ATOM CATALYST, AND SINGLE-WALLED CARBON NANOTUBES PREPARED THEREBY | KOREA INSTITUTE OF ENERGY RESEARCH (KR) | 2024-10-24 | — | — | US | disclosed |
| US-20130302980-A1 | TUNGSTEN FEATURE FILL | NOVELLUS SYSTEMS, INC. | 2013-11-14 | — | — | US | disclosed |
| US-20130267100-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND EVAPORATION SYSTEM | HITACHI KOKUSAI ELECTRIC INC. (JP) | 2013-10-10 | — | — | US | disclosed |
| US-20130157450-A1 | Methods of Forming Metal Silicide Regions on Semiconductor Devices | GLOBALFOUNDRIES INC. (KY) | 2013-06-20 | — | — | US | disclosed |
| US-20100286423-A1 | NICKEL-CONTAINING FILM-FORMING MATERIAL AND PROCESS FOR PRODUCING NICKEL-CONTAINING FILM | SHOWA DENKO K.K. (JP) | 2010-11-11 | — | — | US | disclosed |
| EP-2111488-A2 | ATOMIC LAYER DEPOSITION ON FIBROUS MATERIALS | Honeywell International Inc. (US) | 2009-10-28 | — | — | EP | disclosed |
| WO-2008140578-A2 | ATOMIC LAYER DEPOSITION ON FIBROUS MATERIALS | HONEYWELL INTERNATIONAL INC. (US) | 2008-11-20 | — | — | WO | disclosed |
| US-20080119098-A1 | Atomic layer deposition on fibrous materials | HONEYWELL INTERNATINAL INC. | 2008-05-22 | — | — | US | disclosed |
| US-7045457-B2 | Film forming material, film forming method, and silicide film | TRI CHEMICAL LABORATORES INC. (JP) | 2006-05-16 | — | — | US | disclosed |
| US-20050059243-A1 | Film forming material, film forming method, and silicide film | TRI CHEMICAL LABORATORIES INC. (JP) | 2005-03-17 | — | — | US | disclosed |