SCHEMBL29022696

SCHEMBL29022696

CCCCCCCC[Si](OC)(OCC1CCCCC1)C1CCCCC1

nearest known ligand 0.37

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.37
CNR1 P21554 5/20 0.33
CNR2 P34972 5/20 0.33
NAAA Q02083 2/20 0.32
TSHR P16473 1/20 0.32
METAP2 P50579 1/20 0.31
EPHX1 P07099 8/20 0.31
EPHX2 P34913 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25189054 0.86 NAAA (0.38) CYP1A2CNR1CNR2NAAAEPHX1
SCHEMBL7634962 0.86 NAAA (0.38) CYP1A2CNR1CNR2NAAAEPHX1
SCHEMBL25190381 0.86 NAAA (0.38) CYP1A2CNR1CNR2NAAAEPHX1
SCHEMBL8976887 0.84 CNR1 (0.36) CYP1A2CNR1CNR2NAAAEPHX1
SCHEMBL526129 0.84 CNR1 (0.36) CYP1A2CNR1CNR2NAAAEPHX1
SCHEMBL3697771 0.84 CYP1A2 (0.38) CYP1A2CNR1CNR2NAAAEPHX1
SCHEMBL29022693 0.81 CYP1A2 (0.31) CYP1A2
SCHEMBL28295567 0.80 CYP1A2 (0.34) CYP1A2CNR1CNR2TSHR
SCHEMBL29008540 0.79
SCHEMBL969004 0.79 CYP1A2 (0.39) CYP1A2CNR1CNR2NAAAEPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112526822-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2025-02-28 CN disclosed
CN-112286000-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-12-03 CN disclosed
CN-111856882-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-11-29 CN disclosed
CN-114660896-B Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound 信越化学工业株式会社 2024-06-11 CN disclosed
CN-108473684-B Process for producing siloxane polymer 东丽精细化工株式会社 2023-05-12 CN disclosed