Known targets — ChEMBL curated mechanism
ADRA2AADRA2BADRA2CADRB2AGTR1AVPR1AAVPR1BAVPR2BDKRB2CALCRCHRNA3CHRNB4ESR1ESR2GHSRGNRHRGSC1HSPA8MALT1MC1RMC4RNOS1NOS2NOS3OPRK1OXTRRAMP1RAMP2RAMP3SCN5ASSTR1SSTR2SSTR3SSTR4SSTR5dacAdacBdacCfolPftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Ether. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.41 |
| ▸ | TSHR | P16473 | 3/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.38 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.38 |
| ▸ | FFAR3 | O14843 | 2/20 | 0.37 |
| ▸ | LCK | P06239 | 1/20 | 0.37 |
| ▸ | FYN | P06241 | 1/20 | 0.37 |
| ▸ | THRB | P10828 | 1/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.31 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.31 |
| ▸ | MGAM | O43451 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | SI | P14410 | 1/20 | 0.31 |
| ▸ | MGAM2 | Q2M2H8 | 1/20 | 0.31 |
| ▸ | SOAT1 | P35610 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ether SCHEMBL115545 | 0.86 | — | — | |
| Ether SCHEMBL20338904 | 0.86 | ALDH1A1 (0.50) | ALDH1A1TSHRLMNAHSD17B10FFAR3 | |
| Ether SCHEMBL28328411 | 0.86 | ALDH1A1 (0.50) | ALDH1A1TSHRLMNAHSD17B10FFAR3 | |
| Ether SCHEMBL7115101 | 0.86 | ALDH1A1 (0.50) | ALDH1A1TSHRLMNAHSD17B10FFAR3 | |
| Acetic Acid SCHEMBL10353591 | 0.86 | FFAR3 (0.50) | ALDH1A1TSHRFFAR3LCKFYN | |
| Acetic Acid SCHEMBL1362080 | 0.86 | — | — | |
| Ether SCHEMBL28393262 | 0.86 | ALDH1A1 (0.50) | ALDH1A1TSHRLMNAHSD17B10FFAR3 | |
| Ether SCHEMBL8375323 | 0.86 | TSHR (0.42) | ALDH1A1TSHRLMNAHSD17B10THRB | |
| Ether SCHEMBL4796022 | 0.86 | TSHR (0.42) | ALDH1A1TSHRLMNAHSD17B10THRB | |
| Ether SCHEMBL5798215 | 0.85 | ALDH1A1 (0.48) | ALDH1A1TSHRLMNAHSD17B10THRB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| CN-118146606-A | Bioelectrode composition, bioelectrode, and bioelectrode manufacturing method | 信越化学工业株式会社 | 2024-06-07 | — | — | CN | disclosed |
| CN-118044816-A | Bioelectrode, bioelectrode composition, and bioelectrode manufacturing method | 信越化学工业株式会社 | 2024-05-17 | — | — | CN | disclosed |
| CN-114829457-B | Polysiloxane copolymer, method of preparing the same, and resin composition including the same | 胡网加成股份有限公司 | 2024-05-03 | — | — | CN | disclosed |
| CN-108375878-B | Polymerizable composition, method for producing cured film, and cured film | 东京应化工业株式会社 | 2023-12-08 | — | — | CN | disclosed |
| CN-116917378-A | Photosensitive composition comprising organometallic compound and polysiloxane copolymer and method for preparing the same | 胡网加成股份有限公司 | 2023-10-20 | — | — | CN | disclosed |
| CN-116804825-A | Composition for forming silicon-containing metal hard mask and pattern forming method | 信越化学工业株式会社 | 2023-09-26 | — | — | CN | disclosed |
| CN-111208710-B | Iodine-containing thermosetting silicon-containing material, resist underlayer film forming composition for extreme ultraviolet lithography containing the same, and pattern forming method | 信越化学工业株式会社 | 2023-08-22 | — | — | CN | disclosed |
| CN-111458980-B | Composition for forming underlayer film of silicon-containing resist and method for forming pattern | 信越化学工业株式会社 | 2023-08-11 | — | — | CN | disclosed |
| CN-116514161-A | Nanoparticle, nanoparticle dispersion liquid, and method for producing nanoparticle | 东京应化工业株式会社 | 2023-08-01 | — | — | CN | disclosed |