SCHEMBL292002

SCHEMBL292002

O=S(=O)(O)CC(S)Cc1nc2ccccc2s1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ SMN1; SMN2 Q16637 5/20 0.50
▸ RAB9A P51151 3/20 0.50
▸ NPC1 O15118 2/20 0.50
▸ APEX1 P27695 1/20 0.50
▸ UBE2T Q9NPD8 1/20 0.47
▸ ASIC3 Q9UHC3 1/20 0.47
▸ HTT P42858 2/20 0.46
▸ ALOX15 P16050 1/20 0.46
▸ CYP1A2 P05177 1/20 0.46
▸ CYP2C19 P33261 1/20 0.46
▸ HPGD P15428 3/20 0.45
▸ KMT2A Q03164 3/20 0.45
▸ ALDH1A1 P00352 2/20 0.45
▸ MEN1 O00255 2/20 0.45
▸ KDM4E B2RXH2 2/20 0.44
▸ TDP1 Q9NUW8 1/20 0.44
▸ MAPT P10636 2/20 0.43
▸ GAA P10253 2/20 0.43
▸ PSMB8 P28062 1/20 0.43
▸ PSMB5 P28074 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30950697 0.86 SMN1; SMN2 (0.48) SMN1; SMN2RAB9ANPC1APEX1UBE2T
SCHEMBL1446355 0.86 SMN1; SMN2 (0.48) SMN1; SMN2RAB9ANPC1APEX1UBE2T
SCHEMBL29096740 0.83 SMN1; SMN2 (0.50) SMN1; SMN2RAB9ANPC1APEX1UBE2T
SCHEMBL30950696 0.79 UBE2T (0.53) SMN1; SMN2RAB9ANPC1UBE2TASIC3
SCHEMBL28795915 0.77 SMN1; SMN2 (0.69) SMN1; SMN2RAB9ANPC1UBE2TASIC3
SCHEMBL2904753 0.76 SMN1; SMN2 (0.51) SMN1; SMN2RAB9ANPC1UBE2TASIC3
SCHEMBL8414136 0.75 UBE2T (0.56) SMN1; SMN2RAB9ANPC1UBE2TASIC3
SCHEMBL28114059 0.75 CYP1A2 (0.50) SMN1; SMN2RAB9ANPC1UBE2TASIC3
SCHEMBL2134712 0.73 UBE2T (0.50) SMN1; SMN2RAB9ANPC1UBE2TASIC3
SCHEMBL29023737 0.73 UBE2T (0.53) SMN1; SMN2RAB9ANPC1UBE2TASIC3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 272 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115198309-A Electrolysis method for purifying low-silver low-sulfur ultra-high-purity copper 江苏鑫瑞崚新材料科技有限公司 2022-10-18 — — CN claimed
CN-109863261-B Defect-free filling method of through silicon via and copper plating solution used for filling method 韩国生产技术研究院 2021-08-20 — — CN claimed
US-10982343-B2 Plating compositions for electrolytic copper deposition, its use and a method for electrolytically depositing a copper or copper alloy layer onto at least one surface of a substrate ATOTECH DEUTSCHLAND GMBH (DE) 2021-04-20 — — US claimed
US-20200347504-A1 PLATING COMPOSITIONS FOR ELECTROLYTIC COPPER DEPOSITION, ITS USE AND A METHOD FOR ELECTROLYTICALLY DEPOSITING A COPPER OR COPPER ALLOY LAYER ONTO AT LEAST ONE SURFACE OF A SUBSTRATE ATOTECH DEUTSCHLAND GMBH (DE) 2020-11-05 — — US claimed
EP-3483307-B1 PLATING COMPOSITIONS FOR ELECTROLYTIC COPPER DEPOSITION, ITS USE AND A METHOD FOR ELECTROLYTICALLY DEPOSITING A COPPER OR COPPER ALLOY LAYER ONTO AT LEAST ONE SURFACE OF A SUBSTRATE ATOTECH DEUTSCHLAND GMBH (DE) 2020-04-01 — — EP claimed
EP-3312920-B1 ELECTROLYTIC COPPER FOIL FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY INCLUDING SAME KCF TECH CO LTD (KR) 2020-03-18 — — EP claimed
CN-108026656-B Electro-coppering organic additive comprising two kinds of leveling agents and include the electrolytic copper plating solution of the additive 韩国生产技术研究院 2019-10-01 — — CN claimed
CN-109863261-A The zero defect fill method of silicon through electrode and copper plating bath for the fill method 韩国生产技术研究院 2019-06-07 — — CN claimed
EP-3483307-A1 PLATING COMPOSITIONS FOR ELECTROLYTIC COPPER DEPOSITION, ITS USE AND A METHOD FOR ELECTROLYTICALLY DEPOSITING A COPPER OR COPPER ALLOY LAYER ONTO AT LEAST ONE SURFACE OF A SUBSTRATE ATOTECH Deutschland GmbH (DE) 2019-05-15 — — EP claimed
CN-108350590-A It is used to form the electro-coppering organic additive of high-flatness copper plating film and the electrolytic copper plating solution comprising the additive 韩国生产技术研究院 2018-07-31 — — CN claimed
US-20090101515-A1 IRON-PHOSPHORUS ELECTROPLATING BATH AND METHOD ATOTECH DEUTSCHLAND GMBH & CO. KG (F/K/A ATOTECH DEUTSCHLAND GMBH) (DE) 2009-04-23 — — US claimed
US-20080142370-A1 Aqueous, Acidic Solution and Method for Electrolytically Depositing Copper Coatings as Well as Use of Said Solution ATOTECH DEUTSCHLAND GMBH (DE) 2008-06-19 — — US claimed
EP-1651801-B1 AQUEOUS, ACIDIC SOLUTION AND METHOD FOR ELECTROLYTICALLY DEPOSITING COPPER COATINGS AS WELL AS USE OF SAID SOLUTION ATOTECH DEUTSCHLAND GMBH (DE) 2008-01-23 — — EP claimed
US-20070215490-A1 METHOD OF ANALYZING ACCELERATOR FOR COPPER ELECTROPLATING ROCKWOOD ELECTROCHEMICALS ASIA LTD. (TW) 2007-09-20 — — US claimed
EP-1152071-B1 Copper plating method ELECTROPLATING ENG (JP) 2005-09-07 — — EP claimed
EP-1152071-A1 Copper plating method Electroplating Engineers of Japan Limited (JP) 2001-11-07 — — EP claimed
EP-0785297-B1 An aqueous acid bath for the electrodeposition of a shiny and tear-free copper coating and its application ATOTECH DEUTSCHLAND GMBH (DE) 2000-01-05 — — EP claimed
EP-0785297-A2 An aqueous acid bath for the electrodeposition of a shiny and tear-free copper coating and its application ATOTECH Deutschland GmbH (DE) 1997-07-23 — — EP claimed
EP-0598763-B1 ACID BATH FOR THE GALVANIC DEPOSITION OF COPPER, AND THE USE OF SUCH A BATH ATOTECH DEUTSCHLAND GMBH (DE) 1995-12-13 — — EP claimed
WO-1993003204-A1 ACID BATH FOR THE GALVANIC DEPOSITION OF COPPER, AND THE USE OF SUCH A BATH ATOTECH DEUTSCHLAND GMBH (DE) 1993-02-18 — — WO claimed
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