⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL137606 | 1.00 | — | — | |
| SCHEMBL30105871 | 1.00 | — | — | |
| SCHEMBL31415097 | 0.87 | — | — | |
| SCHEMBL31345553 | 0.87 | — | — | |
| SCHEMBL31244150 | 0.87 | — | — | |
| SCHEMBL566932 | 0.87 | — | — | |
| SCHEMBL920654 | 0.87 | — | — | |
| SCHEMBL31558889 | 0.87 | — | — | |
| Lithium Ion SCHEMBL6883328 | 0.87 | — | — | |
| SCHEMBL14691700 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 147 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260143787-A1 | CFET STRUCTURE WITH MULTIPLE THRESHOLD VOLTAGES AND METHOD MAKING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD (TW) | 2026-05-21 | — | — | US | claimed |
| US-20260136642-A1 | Threshold Voltage Tuning Using a Multiple Dipole Loop Process for Monolithic CFET Devices | TAIWAN SEMICONDUCTOR MFG (TW) | 2026-05-14 | — | — | US | claimed |
| US-12588194-B2 | Method for physically unclonable function through gate height tuning | UNITED MICROELECTRONICS CORP. (TW) | 2026-03-24 | — | — | US | claimed |
| US-20250309102-A1 | METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE PREPARED BY USING THE SAME | Innolux Corporation (TW) | 2025-10-02 | — | — | US | claimed |
| US-12396378-B2 | Memristor having metal/ion channels formed in insulating layer and resistive switching memory device including the same | Research & Business Foundation Sungkyunkwan University (KR) | 2025-08-19 | — | — | US | claimed |
| WO-2025052365-A1 | METHOD OF MAKING HIGH ROBUSTNESS E-MODE HIGH ELECTRON MOBILITY TRANSISTOR | INDIAN INSTITUTE OF SCIENCE (IN) | 2025-03-13 | — | — | WO | claimed |
| WO-2025052363-A1 | METHOD FOR HIGH THRESHOLD VOLTAGE AND HIGH BREAKDOWN GATE STACK IN P-GAN GATE E-MODE HEMTS | INDIAN INSTITUTE OF SCIENCE (IN) | 2025-03-13 | — | — | WO | claimed |
| US-20250017003-A1 | METHOD FOR PHYSICALLY UNCLONABLE FUNCTION THROUGH GATE HEIGHT TUNING | UNITED MICROELECTRONICS CORP. (TW) | 2025-01-09 | — | — | US | claimed |
| US-12080725-B2 | Hybrid high-K dielectric material film stacks comprising zirconium oxide utilized in display devices | APPLIED MATERIALS, INC. (US) | 2024-09-03 | — | — | US | claimed |
| US-20230369354-A1 | HYBRID HIGH-K DIELECTRIC MATERIAL FILM STACKS COMPRISING ZIRCONIUM OXIDE UTILIZED IN DISPLAY DEVICES | APPLIED MATERIALS, INC. | 2023-11-16 | — | — | US | claimed |
| US-11742362-B2 | Hybrid high-k dielectric material film stacks comprising zirconium oxide utilized in display devices | APPLIED MATERIAL, INC. (US) | 2023-08-29 | — | — | US | claimed |
| US-11522011-B2 | Selector element with ballast for low voltage bipolar memory devices | INTEL CORPORATION (US) | 2022-12-06 | — | — | US | claimed |
| CN-114975634-A | Mixed high-K dielectric material film stack comprising zirconium oxide for use in display devices | 应用材料公司 | 2022-08-30 | — | — | CN | claimed |
| CN-109863616-B | Encapsulation film stack for OLED applications with desired profile control | 应用材料公司 | 2022-07-12 | — | — | CN | claimed |
| CN-109075208-B | Mixed high-K dielectric material film stack comprising zirconium oxide for use in display devices | 应用材料公司 | 2022-05-03 | — | — | CN | claimed |
| US-20220123208-A1 | MEMRISTOR HAVING METAL/ION CHANNELS FORMED IN INSULATING LAYER AND RESISTIVE SWITCHING MEMORY DEVICE INCLUDING THE SAME | Research & Business Foundation Sungkyunkwan University (KR) | 2022-04-21 | — | — | US | claimed |
| US-20260143787-A1 | CFET STRUCTURE WITH MULTIPLE THRESHOLD VOLTAGES AND METHOD MAKING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD (TW) | 2026-05-21 | — | — | US | disclosed |
| US-20260136642-A1 | Threshold Voltage Tuning Using a Multiple Dipole Loop Process for Monolithic CFET Devices | TAIWAN SEMICONDUCTOR MFG (TW) | 2026-05-14 | — | — | US | disclosed |
| EP-3948370-A1 | COATING FOR A HEADS-UP DISPLAY WITH LOW VISIBLE LIGHT REFLECTANCE | Vitro Flat Glass LLC (US) | 2022-02-09 | — | — | EP | disclosed |
| EP-3948372-A1 | HEATABLE WINDSHIELDS | Vitro Flat Glass LLC (US) | 2022-02-09 | — | — | EP | disclosed |