⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Zinc Ion SCHEMBL16970958 | 1.00 | — | — | |
| Zinc Ion SCHEMBL16970957 | 0.91 | — | — | |
| Zinc Ion SCHEMBL30674780 | 0.89 | — | — | |
| Zinc Ion SCHEMBL36518 | 0.89 | — | — | |
| SCHEMBL29383267 | 0.89 | — | — | |
| Zinc Ion SCHEMBL29886607 | 0.89 | — | — | |
| Zinc Ion SCHEMBL95145 | 0.89 | — | — | |
| Zinc Ion SCHEMBL447654 | 0.89 | — | — | |
| SCHEMBL350384 | 0.89 | — | — | |
| Zinc Ion SCHEMBL23671963 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2025038369-A1 | FEFET STRUCTURES USING AMORPHOUS OXIDE SEMICONDUCTOR CHANNELS ON INTEGRATED CIRCUITS | VERSUM MATERIALS US, LLC (US) | 2025-02-20 | — | — | WO | claimed |
| US-20260096101-A1 | SEMICONDUCTOR MEMORY DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-02 | — | — | US | disclosed |
| WO-2025038368-A1 | INTEGRATED CIRCUIT HAVING MICROVAULT MEMORIES | VERSUM MATERIALS US, LLC (US) | 2025-02-20 | — | — | WO | disclosed |
| WO-2025038369-A1 | FEFET STRUCTURES USING AMORPHOUS OXIDE SEMICONDUCTOR CHANNELS ON INTEGRATED CIRCUITS | VERSUM MATERIALS US, LLC (US) | 2025-02-20 | — | — | WO | disclosed |
| CN-118693121-A | Display with differently shaped stacks | 汇融科技有限公司 | 2024-09-24 | — | — | CN | disclosed |
| WO-2024184718-A1 | SEMICONDUCTOR DEVICE | 株式会社半導体エネルギー研究所 | 2024-09-12 | — | — | WO | disclosed |
| US-12027629-B2 | Oxide semiconductor field effect transistor | UNITED MICROELECTRONICS CORP. (TW) | 2024-07-02 | — | — | US | disclosed |
| WO-2024047486-A1 | STORAGE DEVICE | 株式会社半導体エネルギー研究所 | 2024-03-07 | — | — | WO | disclosed |
| WO-2024028681-A1 | SEMICONDUCTOR DEVICE AND STORAGE DEVICE | 株式会社半導体エネルギー研究所 | 2024-02-08 | — | — | WO | disclosed |
| WO-2023242664-A1 | SEMICONDUCTOR DEVICE AND STORAGE DEVICE | 株式会社半導体エネルギー研究所 | 2023-12-21 | — | — | WO | disclosed |
| WO-2023237961-A1 | SEMICONDUCTOR DEVICE, STORAGE DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | 株式会社半導体エネルギー研究所 | 2023-12-14 | — | — | WO | disclosed |
| WO-2023203428-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | 株式会社半導体エネルギー研究所 | 2023-10-26 | — | — | WO | disclosed |
| WO-2023199160-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | 株式会社半導体エネルギー研究所 | 2023-10-19 | — | — | WO | disclosed |
| US-20230178657-A1 | OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR | UNITED MICROELECTRONICS CORP. (TW) | 2023-06-08 | — | — | US | disclosed |
| US-11631771-B2 | Oxide semiconductor field effect transistor | UNITED MICROELECTRONICS CORP. (TW) | 2023-04-18 | — | — | US | disclosed |
| CN-110890428-B | Oxide semiconductor field effect transistor and forming method thereof | 联华电子股份有限公司 | 2023-03-24 | — | — | CN | disclosed |
| US-11342465-B2 | Method of forming oxide semiconductor field effect transistor | UNITED MICROELECTRONICS CORP. (TW) | 2022-05-24 | — | — | US | disclosed |