SCHEMBL29559396

SCHEMBL29559396

Cc1ccc(S(=O)(=O)ON=C2c3c(ccc4ccccc34)OC2C)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTT P42858 4/20 0.41
MEN1 O00255 3/20 0.41
KMT2A Q03164 3/20 0.41
SMN1; SMN2 Q16637 3/20 0.41
POLB P06746 1/20 0.41
ALDH1A1 P00352 8/20 0.38
HSP90AA1 P07900 4/20 0.37
MAPT P10636 4/20 0.37
XBP1 P17861 4/20 0.37
MPI P34949 4/20 0.37
NPSR1 Q6W5P4 4/20 0.37
LMNA P02545 3/20 0.37
RAB9A P51151 3/20 0.37
TDP1 Q9NUW8 2/20 0.37
PKM P14618 2/20 0.37
MAPK1 P28482 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
HKDC1 Q2TB90 1/20 0.36
KEAP1 Q14145 1/20 0.35
NFE2L2 Q16236 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17875139 1.00 HTT (0.41) HTTMEN1KMT2ASMN1; SMN2POLB
SCHEMBL6124010 1.00 HTT (0.41) HTTMEN1KMT2ASMN1; SMN2POLB
SCHEMBL6124011 0.92 ALDH1A1 (0.38) HTTMEN1KMT2ASMN1; SMN2POLB
SCHEMBL15082830 0.90 HSP90AA1 (0.35) HTTMEN1KMT2ASMN1; SMN2POLB
SCHEMBL6124029 0.88 MEN1 (0.39) HTTMEN1KMT2ASMN1; SMN2POLB
SCHEMBL15082837 0.86 MEN1 (0.38) HTTMEN1KMT2ASMN1; SMN2POLB
SCHEMBL6124021 0.86 SMN1; SMN2 (0.38) HTTMEN1KMT2ASMN1; SMN2POLB
SCHEMBL6124030 0.86 ALDH1A1 (0.39) HTTMEN1KMT2ASMN1; SMN2POLB
SCHEMBL15085467 0.85 ALDH1A1 (0.34) HTTMEN1KMT2ASMN1; SMN2ALDH1A1
SCHEMBL6124018 0.85 SIRT2 (0.38) HTTMEN1KMT2ASMN1; SMN2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11848249-B2 Manufacturing method for thermal conductive layer, manufacturing method for laminate, and manufacturing method for semiconductor device FUJIFILM CORPORATION (JP) 2023-12-19 US disclosed
CN-114450098-B Method for manufacturing heat conductive layer, method for manufacturing laminate, and method for manufacturing semiconductor device 富士胶片株式会社 2023-05-02 CN disclosed
US-20220216126-A1 MANUFACTURING METHOD FOR THERMAL CONDUCTIVE LAYER, MANUFACTURING METHOD FOR LAMINATE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2022-07-07 US disclosed
CN-114450098-A Method for manufacturing heat conductive layer, method for manufacturing laminate, and method for manufacturing semiconductor device 富士胶片株式会社 2022-05-06 CN disclosed
WO-2022065360-A1 PATTERNED ADHESIVE LAYER, MANUFACTURING METHOD THEREOF, CURABLE COMPOSITION, LAMINATE, AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD 富士フイルム株式会社 2022-03-31 WO disclosed