SCHEMBL29664974

SCHEMBL29664974

Cc1cc(O)cc(C(=O)O)c1

nearest known ligand 1.00 ✓ in ChEMBL — recovers established targets

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HCAR1 Q9BXC0 3/20 1.00
TPMT P51580 1/20 0.73
CA12 O43570 6/20 0.68
CA1 P00915 6/20 0.68
CA2 P00918 6/20 0.68
CA9 Q16790 6/20 0.68
CA7 P43166 5/20 0.68
CA14 Q9ULX7 5/20 0.68
ALDH1A1 P00352 3/20 0.55
HCAR2 Q8TDS4 1/20 0.48
RXRA P19793 1/20 0.47
RXRB P28702 1/20 0.47
CA6 P23280 4/20 0.46
CA5A P35218 4/20 0.46
CA3 P07451 3/20 0.46
CA4 P22748 3/20 0.46
CA5B Q9Y2D0 3/20 0.46
SMN1; SMN2 Q16637 2/20 0.46
KDM4E B2RXH2 1/20 0.46
LMNA P02545 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL987044 1.00 HCAR1 (1.00) HCAR1TPMTCA12CA1CA2
SCHEMBL30758058 0.87 HCAR1 (0.77) HCAR1TPMTCA12CA1CA2
SCHEMBL221684 0.85 TPMT (1.00) HCAR1TPMTCA12CA1CA2
SCHEMBL40661 0.85 TPMT (0.89) HCAR1TPMTCA12CA1CA2
SCHEMBL10370027 0.83 HCAR1 (0.71) HCAR1TPMTCA12CA1CA2
SCHEMBL21637543 0.82 HCAR1 (0.69) HCAR1TPMTCA12CA1CA2
SCHEMBL29807828 0.82 HCAR1 (0.69) HCAR1TPMTCA12CA1CA2
SCHEMBL28363894 0.82 HCAR1 (0.69) HCAR1TPMTCA12CA1CA2
SCHEMBL10197811 0.82 HCAR1 (0.68) HCAR1TPMTCA12CA1CA2
Hydrochloric Acid SCHEMBL9622124 0.82 TPMT (0.84) HCAR1TPMTCA12CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119604562-A Hydrophilic oil-repellent polymer 住友化学株式会社 2025-03-11 CN disclosed
WO-2022124246-A1 RECESS ETCHING SOLUTION, RECESS ETCHING METHOD, AND SURFACE-TREATED SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD 三菱瓦斯化学株式会社 2022-06-16 WO disclosed