SCHEMBL2967758

SCHEMBL2967758

[O-][N+]1(CC(O)CO)CCCCC1

nearest known ligand 0.35

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.35
LMNA P02545 1/20 0.35
THRB P10828 1/20 0.35
MAPT P10636 1/20 0.32
ATM Q13315 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16673571 0.78 THRB (0.32) ALDH1A1LMNATHRB
SCHEMBL10256421 0.73 APOBEC3A (0.46) ALDH1A1LMNAMAPTATM
SCHEMBL10265837 0.70 APOBEC3A (0.43) ALDH1A1LMNATHRBMAPTATM
Glycerin SCHEMBL11802861 0.68
Glycerin SCHEMBL10802409 0.68 LMNA (0.75) ALDH1A1LMNATHRBMAPTATM
SCHEMBL15540901 0.66
SCHEMBL10818580 0.65
Cyclohexane SCHEMBL9065966 0.63 LMNA (0.64) ALDH1A1LMNATHRBMAPTATM
Cyclohexane SCHEMBL10786682 0.63 LMNA (0.64) ALDH1A1LMNATHRBMAPTATM
SCHEMBL1616368 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8795942-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-05 US disclosed
US-7771913-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-10 US disclosed
US-7629106-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-08 US disclosed
US-7476485-B2 Resist lower layer film material and method for forming a pattern SHIN-ESTU CHEMICAL CO., LTD. (JP) 2009-01-13 US disclosed
US-7459261-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-02 US disclosed
US-20080153030-A1 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-06-26 US disclosed
US-20070231738-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-7232641-B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-19 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-7214743-B2 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-08 US disclosed
US-7169541-B2 Compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-30 US disclosed
US-20060147836-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
US-20050079446-A1 Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050014092-A1 Novel compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-20 US disclosed
US-20040259037-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-23 US disclosed
US-20040241577-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-02 US disclosed