SCHEMBL29706138

SCHEMBL29706138

CCCO[Bi]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29706111 0.77
SCHEMBL703909 0.72
SCHEMBL2114336 0.72 CA1 (0.30)
SCHEMBL23873 0.72 CA1 (0.30)
SCHEMBL704463 0.70
SCHEMBL25242791 0.69
SCHEMBL106001 0.69
SCHEMBL378372 0.69
SCHEMBL106329 0.69
Ammonia Solution, Strong SCHEMBL28809989 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
EP-4700067-A1 COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-25 EP disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
US-20260029706-A1 COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-29 US disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
EP-3686256-B1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2023-06-28 EP disclosed
EP-4020081-B1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND SHINETSU CHEMICAL CO (JP) 2023-05-17 EP disclosed
CN-111423587-B Thermosetting silicon-containing compound, composition for forming silicon-containing film, and method for forming pattern 信越化学工业株式会社 2023-01-31 CN disclosed
US-11485824-B2 Thermosetting silicon-containing compound, composition for forming a silicon-containing film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-11-01 US disclosed
US-11480879-B2 Composition for forming silicon-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-10-25 US disclosed
US-20220282100-A1 METAL OXIDE FILM-FORMING COMPOSITION, AND METHOD FOR PRODUCING METAL OXIDE FILM USING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2022-09-08 US disclosed
US-20220274912-A1 METAL OXIDE FILM-FORMING COMPOSITION, METHOD FOR PRODUCING METAL OXIDE FILM USING THE SAME, TERTIARY ALKYLOXYCARBONYL GROUP-MODIFIED BISNAPHTHOL FLUORENE COMPOUND, AND METHOD FOR PRODUCING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2022-09-01 US disclosed
US-20220221793-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-07-14 US disclosed
US-11385544-B2 Composition for forming silicon-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-07-12 US disclosed
EP-4020081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND Shin-Etsu Chemical Co., Ltd. (JP) 2022-06-29 EP disclosed