⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL49555 | 0.76 | ADRB2 (0.45) | — | |
| SCHEMBL4075267 | 0.76 | ADRB2 (0.45) | — | |
| SCHEMBL702931 | 0.76 | ADRB2 (0.39) | — | |
| SCHEMBL703974 | 0.76 | ADRB2 (0.39) | — | |
| Ammonia Solution, Strong SCHEMBL27834149 | 0.74 | ADRB2 (0.38) | — | |
| SCHEMBL706862 | 0.74 | ADRB2 (0.38) | — | |
| SCHEMBL702433 | 0.74 | ADRB2 (0.38) | — | |
| SCHEMBL704162 | 0.74 | ADRB2 (0.38) | — | |
| SCHEMBL705072 | 0.74 | ADRB2 (0.38) | — | |
| SCHEMBL9796521 | 0.73 | ADRB2 (0.43) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| CN-112526822-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2025-02-28 | — | — | CN | disclosed |
| US-12174541-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-12-24 | — | — | US | disclosed |
| CN-112286000-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-12-03 | — | — | CN | disclosed |
| EP-3686256-B1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2023-06-28 | — | — | EP | disclosed |
| EP-4020081-B1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND | SHINETSU CHEMICAL CO (JP) | 2023-05-17 | — | — | EP | disclosed |
| CN-111423587-B | Thermosetting silicon-containing compound, composition for forming silicon-containing film, and method for forming pattern | 信越化学工业株式会社 | 2023-01-31 | — | — | CN | disclosed |
| US-11485824-B2 | Thermosetting silicon-containing compound, composition for forming a silicon-containing film, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-11-01 | — | — | US | disclosed |
| US-11480879-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-10-25 | — | — | US | disclosed |
| US-20220282100-A1 | METAL OXIDE FILM-FORMING COMPOSITION, AND METHOD FOR PRODUCING METAL OXIDE FILM USING THE SAME | TOKYO OHKA KOGYO CO., LTD. (JP) | 2022-09-08 | — | — | US | disclosed |
| US-20220274912-A1 | METAL OXIDE FILM-FORMING COMPOSITION, METHOD FOR PRODUCING METAL OXIDE FILM USING THE SAME, TERTIARY ALKYLOXYCARBONYL GROUP-MODIFIED BISNAPHTHOL FLUORENE COMPOUND, AND METHOD FOR PRODUCING THE SAME | TOKYO OHKA KOGYO CO., LTD. (JP) | 2022-09-01 | — | — | US | disclosed |
| US-20220221793-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-07-14 | — | — | US | disclosed |
| US-11385544-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-07-12 | — | — | US | disclosed |
| EP-4020081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND | Shin-Etsu Chemical Co., Ltd. (JP) | 2022-06-29 | — | — | EP | disclosed |