SCHEMBL29790056

SCHEMBL29790056

O=C(Nc1ccccc1NC(=O)OCc1c([N+](=O)[O-])cccc1[N+](=O)[O-])OCc1c([N+](=O)[O-])cccc1[N+](=O)[O-]

nearest known ligand 0.53

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 4/20 0.53
MEN1 O00255 3/20 0.53
MAPT P10636 3/20 0.48
MAPK1 P28482 2/20 0.48
ALDH1A1 P00352 4/20 0.46
GAA P10253 3/20 0.46
POLB P06746 3/20 0.46
TP53 P04637 1/20 0.45
RAB9A P51151 2/20 0.45
CXCR1 P25024 1/20 0.45
CXCR2 P25025 1/20 0.45
NPC1 O15118 1/20 0.44
L3MBTL1 Q9Y468 1/20 0.44
LMNA P02545 1/20 0.44
KDM4E B2RXH2 1/20 0.44
KCNMA1 Q12791 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27040969 0.91 HDAC1 (0.49) KMT2AMEN1MAPTMAPK1ALDH1A1
SCHEMBL1057098 0.87 POLB (0.51) KMT2AMEN1MAPTALDH1A1GAA
SCHEMBL15969764 0.87 ALDH1A1 (0.48) KMT2AMEN1MAPTMAPK1ALDH1A1
SCHEMBL29790015 0.85 KMT2A (0.53) KMT2AMEN1MAPTMAPK1ALDH1A1
SCHEMBL14962143 0.82 ALDH1A1 (0.42) KMT2AMEN1MAPTMAPK1ALDH1A1
SCHEMBL16924653 0.82 ALDH1A1 (0.42) KMT2AMEN1MAPTMAPK1ALDH1A1
SCHEMBL15969165 0.82 ALDH1A1 (0.44) KMT2AMEN1MAPTMAPK1ALDH1A1
SCHEMBL6672269 0.81 RAB9A (0.61) KMT2AMEN1MAPTMAPK1ALDH1A1
SCHEMBL15970433 0.81 ALDH1A1 (0.50) KMT2AMEN1MAPTMAPK1ALDH1A1
SCHEMBL2472414 0.81 TDP1 (0.43) KMT2AMEN1MAPTMAPK1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240030030-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-25 US disclosed
WO-2022209816-A1 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-10-06 WO disclosed
WO-2022202402-A1 SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-09-29 WO disclosed
CN-107561863-B Positive photosensitive resin composition and application thereof 奇美实业股份有限公司 2022-09-16 CN disclosed
CN-108732831-B Resin composition, substrate and element comprising same, and method for producing same JSR株式会社 2022-08-16 CN disclosed