⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL25280422 | 0.90 | — | — | |
| SCHEMBL20130839 | 0.84 | CA12 (0.33) | — | |
| SCHEMBL19973288 | 0.77 | — | — | |
| SCHEMBL16405979 | 0.67 | — | — | |
| SCHEMBL10459535 | 0.65 | CA12 (0.35) | — | |
| SCHEMBL17046056 | 0.65 | CA12 (0.35) | — | |
| SCHEMBL28437592 | 0.65 | — | — | |
| SCHEMBL15605733 | 0.65 | — | — | |
| SCHEMBL8650722 | 0.64 | — | — | |
| SCHEMBL1142680 | 0.64 | THRB (0.42) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2025029888-A1 | METHODS TO IMPROVE THERMAL STABILITY AND FILM CRACKING MARGIN FOR LOW TEMPERATURE HIGH TENSILE SILICON NITRIDE THIN FILMS | LAM RESEARCH CORPORATION (US) | 2025-02-06 | — | — | WO | disclosed |
| WO-2024254272-A1 | METHODS TO PROVIDE VOID FREE TRENCH FILL FOR LOGIC AND MEMORY APPLICATIONS | LAM RESEARCH CORPORATION (US) | 2024-12-12 | — | — | WO | disclosed |
| WO-2024102763-A1 | A ROBUST ICEFILL METHOD TO PROVIDE VOID FREE TRENCH FILL FOR LOGIC AND MEMORY APPLICATIONS | LAM RESEARCH CORPORATION (US) | 2024-05-16 | — | — | WO | disclosed |
| EP-4367709-A1 | PLASMA ENHANCED ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS | Lam Research Corporation (US) | 2024-05-15 | — | — | EP | disclosed |
| WO-2023230296-A1 | SINGLE WAFER REACTOR, LOW TEMPERATURE, THERMAL SILICON NITRIDE DEPOSITION | LAM RESEARCH CORPORATION (US) | 2023-11-30 | — | — | WO | disclosed |
| WO-2023205284-A1 | LATERAL GAP FILL | LAM RESEARCH CORPORATION (US) | 2023-10-26 | — | — | WO | disclosed |
| WO-2023178273-A1 | REDUCING CAPACITANCE IN SEMICONDUCTOR DEVICES | LAM RESEARCH CORPORATION (US) | 2023-09-21 | — | — | WO | disclosed |
| WO-2023164717-A1 | SURFACE INHIBITION ATOMIC LAYER DEPOSITION | LAM RESEARCH CORPORATION (US) | 2023-08-31 | — | — | WO | disclosed |
| WO-2023159012-A1 | HIGH PRESSURE INERT OXIDATION AND IN-SITU ANNEALING PROCESS TO IMPROVE FILM SEAM QUALITY AND WER | LAM RESEARCH CORPORATION (US) | 2023-08-24 | — | — | WO | disclosed |
| WO-2023114401-A1 | ATOMIC LAYER DEPOSITION PULSE SEQUENCE ENGINEERING FOR IMPROVED CONFORMALITY FOR LOW TEMPERATURE PRECURSORS | LAM RESEARCH CORPORATION (US) | 2023-06-22 | — | — | WO | disclosed |
| WO-2023114870-A1 | HIGH PRESSURE PLASMA INHIBITION | LAM RESEARCH CORPORATION (US) | 2023-06-22 | — | — | WO | disclosed |
| WO-2023114898-A1 | METHOD TO SMOOTH SIDEWALL ROUGHNESS AND MAINTAIN REENTRANT STRUCTURES DURING DIELECTRIC GAP FILL | LAM RESEARCH CORPORATION (US) | 2023-06-22 | — | — | WO | disclosed |
| WO-2023076524-A1 | ATOMIC LAYER DEPOSITION SEAM REDUCTION | LAM RESEARCH CORPORATION (US) | 2023-05-04 | — | — | WO | disclosed |
| WO-2023283144-A1 | PLASMA ENHANCED ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS | LAM RESEARCH CORPORATION (US) | 2023-01-12 | — | — | WO | disclosed |