SCHEMBL3025965

SCHEMBL3025965

O=S(=O)(OCC12CC3CC(C1)C1(OCCO1)C(C3)C2)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2747141 0.82 CA12 (0.37)
SCHEMBL19874194 0.79 CA2 (0.32)
SCHEMBL12962181 0.77 SCN9A (0.31)
SCHEMBL19294579 0.76 ALDH1A1 (0.34)
SCHEMBL19293552 0.74 ALDH1A1 (0.39)
SCHEMBL13556201 0.73 ALDH1A1 (0.32)
SCHEMBL4855493 0.70 ALDH1A1 (0.39)
SCHEMBL23964603 0.69
SCHEMBL3028193 0.68 ESR1 (0.36)
SCHEMBL12759007 0.68 GRIN2D (0.36)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20100203446-A1 CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-08-12 US disclosed
US-7611822-B2 Positive resist composition used for semiconductor microfabrication employing a lithography process contains an acid generator comprising a compound generating an acid by irradiation and a monomer having a bulky and acid-labile group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-11-03 US disclosed
US-20090042128-A1 Positive resist composition used for semiconductor microfabrication employing a lithography process contains an acid generator comprising a compound generating an acid by irradiation and a monomer having a bulky and acid-labile group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-02-12 US disclosed