SCHEMBL3045847

SCHEMBL3045847

Oc1ccc(-c2ccc(C(c3ccccc3)c3ccccc3)cc2)cc1

nearest known ligand 0.64

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MMP3 P08254 1/20 0.64
BCL2L1 Q07817 1/20 0.64
ESR1 P03372 6/20 0.52
ESR2 Q92731 4/20 0.52
KMT2A Q03164 3/20 0.50
TDP1 Q9NUW8 2/20 0.50
ALDH1A1 P00352 2/20 0.50
GAA P10253 1/20 0.50
IDO1 P14902 1/20 0.50
TDO2 P48775 1/20 0.50
MEN1 O00255 2/20 0.48
LMNA P02545 2/20 0.48
MAPT P10636 1/20 0.48
RAB9A P51151 1/20 0.48
CYP17A1 P05093 2/20 0.47
CA12 O43570 1/20 0.46
CA1 P00915 1/20 0.46
CA2 P00918 1/20 0.46
GLA P06280 1/20 0.46
CA3 P07451 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22238270 1.00 MMP3 (0.64) MMP3BCL2L1ESR1ESR2KMT2A
SCHEMBL12922919 0.95 MMP3 (0.71) MMP3BCL2L1ESR1ESR2KMT2A
SCHEMBL2862193 0.95 MMP3 (0.71) MMP3BCL2L1ESR1ESR2KMT2A
SCHEMBL36791 0.93 IDO1 (0.56) MMP3BCL2L1ESR1ESR2KMT2A
SCHEMBL22694327 0.93 IDO1 (0.56) MMP3BCL2L1ESR1ESR2KMT2A
SCHEMBL982047 0.93 IDO1 (0.56) MMP3BCL2L1ESR1ESR2KMT2A
SCHEMBL19314626 0.93 IDO1 (0.56) MMP3BCL2L1ESR1ESR2KMT2A
SCHEMBL27708306 0.90 IDO1 (0.54) MMP3BCL2L1ESR1ESR2KMT2A
SCHEMBL10445993 0.90 ESR1 (0.65) MMP3BCL2L1ESR1ESR2KMT2A
SCHEMBL9306866 0.87 SLC6A2 (0.55) ALDH1A1CA12CA1CA2CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230209986-A1 Organic Light Emitting Device LG CHEM, LTD. (KR) 2023-06-29 US disclosed
US-8652757-B2 Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-18 US disclosed
US-20130184404-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS USING THE SAME, AND COMPOSITION FOR THE RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 US disclosed
US-8450048-B2 Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-28 US disclosed
US-20100099044-A1 Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film SHIN-ETSU CHEMICAL CO.,LTD. (JP) 2010-04-22 US disclosed