⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17422902 | 0.67 | KMT2A (0.30) | — | |
| SCHEMBL3058506 | 0.67 | CA1 (0.30) | — | |
| Iodide SCHEMBL11469655 | 0.67 | — | — | |
| SCHEMBL28982585 | 0.60 | ADRB2 (0.43) | — | |
| SCHEMBL435498 | 0.60 | — | — | |
| Bromide SCHEMBL302866 | 0.57 | — | — | |
| Ether SCHEMBL29197006 | 0.57 | — | — | |
| Ether SCHEMBL1375446 | 0.57 | — | — | |
| Hydrochloric Acid SCHEMBL235391 | 0.57 | — | — | |
| Ether SCHEMBL9742788 | 0.57 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8476361-B2 | Fine pattern transfer material | SHOWA DENKO K.K. (JP) | 2013-07-02 | — | — | US | claimed |
| EP-2111566-B1 | FINE PATTERN TRANSFER MATERIAL | SHOWA DENKO KK (JP) | 2010-08-18 | — | — | EP | claimed |
| US-20100093907-A1 | Fine Pattern Transfer Material | SHOWDA DENKO K.K. (JP) | 2010-04-15 | — | — | US | claimed |
| EP-2111566-A2 | FINE PATTERN TRANSFER MATERIAL | Showa Denko K.K. (JP) | 2009-10-28 | — | — | EP | claimed |
| WO-2008099903-A2 | FINE PATTERN TRANSFER MATERIAL | SHOWA DENKO K.K. (JP) | 2008-08-21 | — | — | WO | claimed |
| US-20260133485-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND UNDERLAYER FILM-FORMING COMPOSITION | JSR CORPORATION (JP) | 2026-05-14 | — | — | US | disclosed |
| WO-2025079496-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | JSR株式会社 | 2025-04-17 | — | — | WO | disclosed |
| WO-2025041533-A1 | SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND FILM-FORMING COMPOSITION | JSR株式会社 | 2025-02-27 | — | — | WO | disclosed |
| WO-2025013817-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND UNDERLAYER FILM-FORMING COMPOSITION FOR FIRST METAL-CONTAINING RESIST | JSR株式会社 | 2025-01-16 | — | — | WO | disclosed |
| US-20240279064-A1 | COMPOSITE PARTICLE, NEGATIVE ELECTRODE ACTIVE MATERIAL, AND LITHIUM-ION SECONDARY BATTERY | RESONAC CORPORATION (JP) | 2024-08-22 | — | — | US | disclosed |
| EP-4411893-A1 | COMPOSITE PARTICLES, NEGATIVE ELECTRODE ACTIVE MATERIAL AND LITHIUM ION SECONDARY BATTERY | Resonac Corporation (JP) | 2024-08-07 | — | — | EP | disclosed |
| US-20240002572-A1 | SOL LIQUID, MIXED LIQUID, COATING FILM, METHOD OF PRODUCING SOL LIQUID, AND METHOD OF PRODUCING COATING FILM | CANON KABUSHIKI KAISHA (JP) | 2024-01-04 | — | — | US | disclosed |
| EP-1375615-A2 | Hardcoat compositions and hardcoated articles | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-01-02 | — | — | EP | disclosed |
| US-20030236347-A1 | Hardcoat compositions and hardcoated articles | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-25 | — | — | US | disclosed |
| US-20020071077-A1 | Anisotropic conductive film, production method thereof, and display apparatus using anisotropic film | TDK CORPORATION (JP) | 2002-06-13 | — | — | US | disclosed |
| US-20020010273-A1 | Coating composition, coating method, and coated article | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-01-24 | — | — | US | disclosed |
| EP-1162247-A2 | Coating composition, coating method, and coated article | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-12-12 | — | — | EP | disclosed |
| US-6126743-A | REACTING THREE DIFFERENT METAL OXIDES OR COMPOUNDS OF SPECIFIC DIAMETERS, FIRING OR HEATING THE MIXTURE AT A TEMPERATURE 400-1200 DEGREE C AT WHICH CRYSTAL PHASE CAN BE FORMED | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2000-10-03 | — | — | US | disclosed |
| US-5389590-A | Metal phase dispersed; improved toughness | MATSUSHITA ELECTRIC WORKS, LTD. (JP) | 1995-02-14 | — | — | US | disclosed |
| US-5296301-A | Polycrystalline ceramic matrix with metal phase dispersed within grains | MATSUSHITA ELECTRIC WORKS, LTD. (JP) | 1994-03-22 | — | — | US | disclosed |