SCHEMBL3051646

SCHEMBL3051646

OCC1=C(CO)c2cccc3cccc1c23

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.52
HSD17B10 Q99714 7/20 0.52
TSHR P16473 3/20 0.52
MAPK1 P28482 2/20 0.52
ATM Q13315 1/20 0.52
L3MBTL1 Q9Y468 1/20 0.52
CES2 O00748 1/20 0.48
BCHE P06276 1/20 0.48
CES1 P23141 1/20 0.48
MCL1 Q07820 1/20 0.48
HEXA P06865 3/20 0.47
HEXB P07686 3/20 0.47
HPGD P15428 4/20 0.46
CASP1 P29466 2/20 0.46
CASP7 P55210 2/20 0.46
TP53 P04637 1/20 0.46
HIF1A Q16665 1/20 0.46
ERCC1 P07992 1/20 0.45
FEN1 P39748 1/20 0.45
ERCC4 Q92889 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15477047 0.80 HSD17B10 (0.47) ALDH1A1HSD17B10TSHRMAPK1ATM
SCHEMBL17417164 0.73 CES1 (0.54) ALDH1A1HSD17B10TSHRMAPK1L3MBTL1
Hydroxyamine SCHEMBL8519859 0.73 ALDH1A1 (0.72) ALDH1A1HSD17B10TSHRMAPK1ATM
SCHEMBL7767307 0.72 ALDH1A1 (0.55) ALDH1A1HSD17B10TSHRMAPK1ATM
SCHEMBL17988354 0.72 ALDH1A1 (0.55) ALDH1A1HSD17B10TSHRMAPK1ATM
Ammonia Solution, Strong SCHEMBL27626211 0.72 ALDH1A1 (0.81) ALDH1A1HSD17B10TSHRMAPK1ATM
SCHEMBL12485782 0.70 ALDH1A1 (0.60) ALDH1A1HSD17B10TSHRMAPK1ATM
SCHEMBL23525587 0.69 ALDH1A1 (1.00) ALDH1A1HSD17B10TSHRMAPK1ATM
Fluoranthene SCHEMBL29355720 0.69 ALDH1A1 (1.00) ALDH1A1HSD17B10TSHRMAPK1ATM
Fluoranthene SCHEMBL8873541 0.69 ALDH1A1 (1.00) ALDH1A1HSD17B10TSHRMAPK1ATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9804492-B2 Method for forming multi-layer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-31 US disclosed
US-9785049-B2 Method for forming multi-layer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-10 US disclosed
US-20170199457-A1 METHOD FOR FORMING MULTI-LAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-13 US disclosed
US-9658530-B2 Process for forming multi-layer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-23 US disclosed
US-20160111287-A1 METHOD FOR FORMING MULTI-LAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-21 US disclosed
US-20160008844-A1 PROCESS FOR FORMING MULTI-LAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-14 US disclosed
US-8338078-B2 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-25 US disclosed
US-20100104977-A1 PHOTORESIST UNDERCOAT-FORMING MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-29 US disclosed