Bromide

Bromide

SCHEMBL306447

CC(C(O)c1ccccc1)[N+](C)(C)C.[Br-]

nearest known ligand 0.55

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ACHECHKACHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGHRH2OPRM1

The experimentally established mechanism targets of Bromide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CHRM2 known ✓ P08172 1/20 0.55
ADRA2C P18825 2/20 0.55
ADRA1A P35348 1/20 0.55
RGS12 O14924 1/20 0.55
GLA P06280 1/20 0.55
CYP3A4 P08684 1/20 0.55
CYP2D6 P10635 1/20 0.55
CYP2C9 P11712 1/20 0.55
PKM P14618 1/20 0.55
ALOX15 P16050 1/20 0.55
TSHR P16473 1/20 0.55
ALOX12 P18054 1/20 0.55
NFKB1 P19838 1/20 0.55
HTR2A P28223 1/20 0.55
CYP2C19 P33261 1/20 0.55
THPO P40225 1/20 0.55
GNAI1 P63096 1/20 0.55
HSD17B10 Q99714 1/20 0.55
KDM4E B2RXH2 3/20 0.54
LMNA P02545 3/20 0.54

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3386727 0.98 ADRA2C (0.57) ADRA2CCHRM2ADRA1ARGS12GLA
SCHEMBL7892362 0.98 ADRA2C (0.57) ADRA2CCHRM2ADRA1ARGS12GLA
Water SCHEMBL10366292 0.96 ADRA2C (0.55) ADRA2CCHRM2ADRA1ARGS12GLA
Hydrochloric Acid SCHEMBL3386662 0.96 ADRA2C (0.55) ADRA2CCHRM2ADRA1ARGS12GLA
Bromide SCHEMBL25252124 0.80 ADRA2C (0.48) ADRA2CCHRM2ADRA1ARGS12GLA
Bromide SCHEMBL26653709 0.80 ADRA2C (0.48) ADRA2CCHRM2ADRA1ARGS12GLA
Bromide SCHEMBL6005252 0.80 ADRA2C (0.48) ADRA2CCHRM2ADRA1ARGS12GLA
Iodide SCHEMBL6742483 0.79 KDM4E (0.55) ADRA2CCHRM2ADRA1ARGS12GLA
Iodide SCHEMBL6742484 0.79 KDM4E (0.55) ADRA2CCHRM2ADRA1ARGS12GLA
SCHEMBL26858844 0.78 ADRA2C (0.50) ADRA2CCHRM2ADRA1ARGS12GLA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-4849531-A Process for the preparation of 2,3-epoxyamides BAYER AKTIENGESELLSCHAFT (DE) 1989-07-18 US claimed
EP-2755991-B1 METHOD FOR PREPARATION OF BETULINIC ACID STORA ENSO OYJ (FI) 2018-05-16 EP disclosed
US-8945816-B2 Method for forming resist pattern, semiconductor device and production method thereof FUJITSU LIMITED (JP) 2015-02-03 US disclosed
EP-2787017-A2 Epoxy resin adducts and thermosets thereof Dow Global Technologies LLC (US) 2014-10-08 EP disclosed
US-20140275342-A1 EPOXY RESIN COMPOSITIONS, METHODS OF MAKING SAME, AND ARTICLES THEREOF DOW GLOBAL TECHNOLOGIES LLC (US) 2014-09-18 US disclosed
US-20140275343-A1 EPOXY RESIN ADDUCTS AND THERMOSETS THEREOF DOW GLOBAL TECHNOLOGIES LLC (US) 2014-09-18 US disclosed
EP-2778185-A2 Epoxy resin compositions, methods of making same, and articles thereof Dow Global Technologies LLC (US) 2014-09-17 EP disclosed
US-20140179828-A1 EPOXY RESIN COMPOSITIONS, METHODS OF MAKING SAME, AND ARTICLES THEREOF DOW GLOBAL TECHNOLOGIES LLC (US) 2014-06-26 US disclosed
EP-2746312-A2 Epoxy resin compositions, methods of making same, and articles thereof Dow Global Technologies LLC (US) 2014-06-25 EP disclosed
US-8198009-B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same FUJITSU LIMITED (JP) 2012-06-12 US disclosed
EP-1693709-A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same FUJITSU LIMITED (JP) 2006-08-23 EP disclosed
US-20060073419-A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same FUJITSU LIMITED (JP) 2006-04-06 US disclosed
US-20060046446-A1 Semiconductor device and manufacturing method thereof, and gate electrode and manufacturing method thereof FUJITSU LIMITED (JP) 2006-03-02 US disclosed
EP-1513013-A2 Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device FUJITSU LIMITED (JP) 2005-03-09 EP disclosed
US-20050031987-A1 Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device FUJITSU LIMITED (JP) 2005-02-10 US disclosed
US-4849531-A Process for the preparation of 2,3-epoxyamides BAYER AKTIENGESELLSCHAFT (DE) 1989-07-18 US disclosed
US-4442030-A ARALKYLATION WITH BENZOYLACRYLIC ACID, HYDROGENATION, ESTERIFICATION MERCK & CO., INC. (US) 1984-04-10 US disclosed
EP-0025846-B1 IMPROVED PROCESS FOR THE PREPARATION OF VINYLCYCLOPROPANE DERIVATIVES NATIONAL DISTILLERS AND CHEMICAL CORPORATION (US) 1984-03-07 EP disclosed
EP-0025846-A1 Improved process for the preparation of vinylcyclopropane derivatives NATIONAL DISTILLERS AND CHEMICAL CORPORATION (US) 1981-04-01 EP disclosed
US-4252739-A ALKYLATING AGENT SUCH AS 1,4-DIHALO-2-BUTENE, AN ACTIVE METHYLENE COMPOUND, A CATALYTIC ONIUM COMPOUND, AN ALKALI METAL COMPOUND AND WATER; ONE STEP EMERY INDUSTRIES, INC. (US) 1981-02-24 US disclosed