Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Nitric Oxide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Nitric Oxide SCHEMBL31717964 | 0.89 | — | — | |
| Nitric Oxide SCHEMBL30154997 | 0.89 | — | — | |
| Nitric Oxide SCHEMBL31424988 | 0.89 | — | — | |
| Nitric Oxide SCHEMBL3993955 | 0.87 | — | — | |
| Nitric Oxide SCHEMBL7560 | 0.87 | — | — | |
| Nitric Oxide SCHEMBL2888647 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL5104249 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL3636459 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL37670 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL7184108 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 922 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118820-A1 | LIGHT GUIDE PLATE FOR IMAGE DISPLAY | MITSUBISHI CHEMICAL CORPORATION (JP) | 2026-04-30 | — | — | US | claimed |
| US-12588477-B2 | Method of etching a semiconductor device by etching initial mask structures at a region having an extension direction different from the extension direction of the initial mask structures | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION (CN) | 2026-03-24 | — | — | US | claimed |
| US-12487560-B2 | Light guide plate for image display | MITSUBISHI CHEMICAL CORPORATION (JP) | 2025-12-02 | — | — | US | claimed |
| US-20250331400-A1 | DISPLAY PANEL, AND DISPLAY DEVICE INCLUDING THE SAME | SAMSUNG DISPLAY CO., LTD. (KR) | 2025-10-23 | — | — | US | claimed |
| EP-4637311-A1 | DISPLAY PANEL, AND DISPLAY DEVICE INCLUDING THE SAME | Samsung Display Co., Ltd. (KR) | 2025-10-22 | — | — | EP | claimed |
| US-20250044737-A1 | LIGHT GUIDE PLATE FOR IMAGE DISPLAY | MITSUBISHI CHEMICAL CORPORATION (JP) | 2025-02-06 | — | — | US | claimed |
| US-20240222511-A1 | AMORPHOUS SILICON THIN-FILM TRANSISTOR, METHOD FOR PREPARING SAME, AND DISPLAY PANEL | BOE TECHNOLOGY GROUP CO., LTD (CN) | 2024-07-04 | — | — | US | claimed |
| US-20240008263-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME | CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) | 2024-01-04 | — | — | US | claimed |
| CN-113410305-B | Radiation-resistant reinforced LDMOS transistor and preparation method | 西安微电子技术研究所 | 2023-07-04 | — | — | CN | claimed |
| US-11447393-B2 | Graphene and method for preparing same | Research & Business Foundation Sungkyunkwan University (KR) | 2022-09-20 | — | — | US | claimed |
| CN-1700408-A | Trench type metal - insulation layer - metal capacitor arrangement and forming method thereof | SHANGHAI GRACE SEMICONDUCTOR (CN) | 2005-11-23 | — | — | CN | claimed |
| CN-1667832-A | Solid state imaging device and manufacturing method thereof | SANYO ELECTRIC CO (JP) | 2005-09-14 | — | — | CN | claimed |
| CN-1652642-A | Substrate assembly of display device and making method thereof | YOUJING SCIENCE AND TECHNOLOGY (CN) | 2005-08-10 | — | — | CN | claimed |
| CN-1596460-A | Transistor metal gate structure and method of fabrication to minimize non-planarity effects | MOTOROLA INC (US) | 2005-03-16 | — | — | CN | claimed |
| CN-1574362-A | Semiconductor device and method for manufacturing the same | TOKYO SHIBAURA ELECTRIC CO (JP) | 2005-02-02 | — | — | CN | claimed |
| US-20040160178-A1 | Organic light-emitting devices and their encapsulation method and application of this method | TSINGHUA UNIVERSITY (CN) | 2004-08-19 | — | — | US | claimed |
| CN-1503329-A | Method for mfg of semiconductor | ��ʽ���������Ƽ� | 2004-06-09 | — | — | CN | claimed |
| CN-1378704-A | Method for manufacturing semiconductor memory device having anti-reflective film | ADVANCED MICRO DEVICES INC (US) | 2002-11-06 | — | — | CN | claimed |
| EP-0469605-B1 | Process for reducing characteristics degradation of a semiconductor laser | SUMITOMO ELECTRIC INDUSTRIES (JP) | 1996-06-12 | — | — | EP | claimed |
| EP-0469605-A2 | Process for reducing characteristics degradation of a semiconductor laser | SUMITOMO ELECTRIC INDUSTRIES, LIMITED (JP) | 1992-02-05 | — | — | EP | claimed |