Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Nitric Oxide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Nitric Oxide SCHEMBL3993955 | 0.87 | — | — | |
| Nitric Oxide SCHEMBL7560 | 0.87 | — | — | |
| Nitric Oxide SCHEMBL7184108 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL3636459 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL6890944 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL37670 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL2731176 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL2890900 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL5104249 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL306589 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114768851-B | Tantalum nitrogen oxide core-shell structure heterojunction and preparation method and application thereof | 西安交通大学苏州研究院 | 2023-09-22 | — | — | CN | claimed |
| US-20100283179-A1 | Method of Fabricating Metal Nitrogen Oxide Thin Film Structure | ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH (TW) | 2010-11-11 | — | — | US | claimed |
| US-20260056478-A1 | METHOD OF CONTROLLING SEMICONDUCTOR PROCESS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-02-26 | — | — | US | disclosed |
| US-20250218718-A1 | CONTAMINATION PREVENTION DEVICE FOR EXTREME ULTRA-VIOLET (EUV) RETICLE AND EUV EXPOSURE APPARATUS INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-07-03 | — | — | US | disclosed |
| US-20250208519-A1 | EXPOSURE EQUIPMENT | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-06-26 | — | — | US | disclosed |
| CN-113204168-B | Lithographic system and reticle structure and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2024-12-17 | — | — | CN | disclosed |
| US-20240272561-A1 | METHOD OF MANAGING SEMICONDUCTOR PROCESSING APPARATUS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-08-15 | — | — | US | disclosed |
| CN-114768851-B | Tantalum nitrogen oxide core-shell structure heterojunction and preparation method and application thereof | 西安交通大学苏州研究院 | 2023-09-22 | — | — | CN | disclosed |
| CN-114768851-B | Tantalum nitrogen oxide core-shell structure heterojunction and preparation method and application thereof | 西安交通大学苏州研究院 | 2023-09-22 | — | — | CN | disclosed |
| CN-114768851-A | Tantalum-series nitrogen oxide core-shell structure heterojunction and preparation method and application thereof | 西安交通大学苏州研究院 | 2022-07-22 | — | — | CN | disclosed |
| CN-113204168-A | Lithographic system and reticle structure and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2021-08-03 | — | — | CN | disclosed |
| CN-113050370-A | Method for adjusting layout pattern of mask | 台湾积体电路制造股份有限公司 | 2021-06-29 | — | — | CN | disclosed |
| CN-102423715-B | Preparation method for graphene composite photocatalyst with CdS a TaON core-shell structure, and application thereof | UNIV BEIJING SCIENCE & TECH | 2013-04-24 | — | — | CN | disclosed |
| CN-102423715-A | Preparation method and application of CdS @ TaON core-shell structure-graphene composite photocatalyst | UNIV BEIJING SCIENCE & TECH | 2012-04-25 | — | — | CN | disclosed |
| US-20100283179-A1 | Method of Fabricating Metal Nitrogen Oxide Thin Film Structure | ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH (TW) | 2010-11-11 | — | — | US | disclosed |