SCHEMBL3070622

SCHEMBL3070622

CCc1c(CC2CO2)c(C(=O)O)c(CC)c(CC2CO2)c1C(=O)O

nearest known ligand 0.31

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL795247 0.86 TP53 (0.31)
SCHEMBL29031707 0.86 TP53 (0.33) ALDH1A1
SCHEMBL27915392 0.83 PKM (0.31) ALDH1A1
SCHEMBL27142378 0.82 TP53 (0.31)
SCHEMBL3069564 0.81 ALDH1A1 (0.30) ALDH1A1
SCHEMBL3068519 0.79 ALDH1A1 (0.31) ALDH1A1
SCHEMBL1643688 0.79 ALDH1A1 (0.31) ALDH1A1
SCHEMBL1646383 0.79 ALDH1A1 (0.31) ALDH1A1
SCHEMBL960757 0.79
SCHEMBL3080712 0.77 HTT (0.33) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025095106-A1 RESIST UNDERLAYER FILM FORMATION COMPOSITION 日産化学株式会社 2025-05-08 WO disclosed
US-20230103242-A1 METHOD FOR PRODUCING POLYMER NISSAN CHEMICAL CORPORATION (JP) 2023-03-30 US disclosed
US-20230029997-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2023-02-02 US disclosed
WO-2021111977-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2021-06-10 WO disclosed
WO-2021111976-A1 METHOD FOR PRODUCING POLYMER 日産化学株式会社 2021-06-10 WO disclosed
US-9240327-B2 Resist underlayer film-forming composition for EUV lithography containing condensation polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-01-19 US disclosed
US-20140170567-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-06-19 US disclosed
EP-1757986-B1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER AND METHOD FOR FORMING PHOTORESIST PATTERN NISSAN CHEMICAL IND LTD (JP) 2014-05-14 EP disclosed
CN-101160549-B Composition comprising polymer having ethylene-dicarbonyl structure for use in forming anti-reflective coating for lithography NISSAN CHEMICAL IND LTD 2012-10-10 CN disclosed
CN-1965268-B Antireflection film for semiconductor containing condensation type polymer NISSAN CHEMICAL IND LTD 2011-08-03 CN disclosed
CN-101052919-B Sulfonate-containing composition for forming anti-reflective coating for lithography NISSAN CHEMICAL IND LTD 2011-05-25 CN disclosed
US-7790356-B2 Condensation type polymer-containing anti-reflective coating for semiconductor NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-09-07 US disclosed
CN-101160549-A Composition comprising polymer having ethylene-dicarbonyl structure for use in forming anti-reflective coating for lithography NISSAN CHEMICAL IND LTD (JP) 2008-04-09 CN disclosed
US-20080038678-A1 Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor NISSAN CHEMICAL INDUSTRIES LTD. (JP) 2008-02-14 US disclosed
CN-101052919-A Sulfonate-containing composition for forming anti-reflective coating for lithography NISSAN CHEMICAL IND LTD (JP) 2007-10-10 CN disclosed
CN-1965268-A Antireflection film for semiconductor containing condensation type polymer NISSAN CHEMICAL IND LTD (JP) 2007-05-16 CN disclosed
EP-1757986-A1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER Nissan Chemical Industries, Ltd. (JP) 2007-02-28 EP disclosed