⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4579168 | 0.77 | — | — | |
| SCHEMBL26255365 | 0.77 | — | — | |
| SCHEMBL10357930 | 0.74 | ALDH1A1 (0.30) | — | |
| SCHEMBL231605 | 0.73 | TSHR (0.31) | — | |
| SCHEMBL233275 | 0.73 | TSHR (0.31) | — | |
| SCHEMBL25171696 | 0.73 | TSHR (0.31) | — | |
| SCHEMBL29291006 | 0.67 | — | — | |
| SCHEMBL3120020 | 0.65 | — | — | |
| SCHEMBL25168590 | 0.65 | — | — | |
| SCHEMBL26255505 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 112 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12584212-B2 | Compositions and methods using same for germanium seed layer | VERSUM MATERIALS US, LLC (US) | 2026-03-24 | — | — | US | claimed |
| US-12421603-B2 | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2025-09-23 | — | — | US | claimed |
| US-20230287562-A1 | COMPOSITIONS ND METHODS USING SAME FOR GERMANIUM SEED LAYER | VERSUM MATERIALS US, LLC | 2023-09-14 | — | — | US | claimed |
| US-11649547-B2 | Deposition of carbon doped silicon oxide | VERSUM MATERIALS US, LLC (US) | 2023-05-16 | — | — | US | claimed |
| EP-4176100-A1 | COMPOSITIONS AND METHODS USING SAME FOR GERMANIUM SEED LAYER | Versum Materials US, LLC (US) | 2023-05-10 | — | — | EP | claimed |
| US-20210363639-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC (US) | 2021-11-25 | — | — | US | claimed |
| EP-3902939-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | Versum Materials US, LLC (US) | 2021-11-03 | — | — | EP | claimed |
| EP-3844319-A1 | COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS | Versum Materials US, LLC (US) | 2021-07-07 | — | — | EP | claimed |
| WO-2020163359-A1 | DEPOSITION OF CARBON DOPED SILICON OXIDE | VERSUM MATERIALS US, LLC (US) | 2020-08-13 | — | — | WO | claimed |
| US-20200248309-A1 | Deposition Of Carbon Doped Silicon Oxide | VERSUM MATERIALS US, LLC (US) | 2020-08-06 | — | — | US | claimed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | claimed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | claimed |
| US-8460753-B2 | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-06-11 | — | — | US | claimed |
| EP-2192207-B1 | Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films | AIR PROD & CHEM (US) | 2012-06-20 | — | — | EP | claimed |
| US-20120148745-A1 | Aminovinylsilane for CVD and ALD SiO2 Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-06-14 | — | — | US | claimed |
| EP-2463404-A1 | Aminovinylsilane for cvd and ald sio2 films | Air Products and Chemicals, Inc. (US) | 2012-06-13 | — | — | EP | claimed |
| US-20100291321-A1 | Dielectric Barrier Deposition Using Nitrogen Containing Precursor | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-11-18 | — | — | US | claimed |
| EP-2251899-A1 | Dielectric barrier deposition using nitrogen containing precursor | Air Products and Chemicals, Inc. (US) | 2010-11-17 | — | — | EP | claimed |
| EP-2192207-A1 | Amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-06-02 | — | — | EP | claimed |
| US-20100120262-A1 | Amino Vinylsilane Precursors for Stressed SiN Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-05-13 | — | — | US | claimed |