SCHEMBL3076727

SCHEMBL3076727

CC(C)NC(=CC[SiH3])NC(C)C

nearest known ligand 0.32

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.32
ALDH1A1 P00352 1/20 0.30
GAA P10253 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3120028 0.80 TSHR (0.30) TSHR
SCHEMBL3325919 0.75 TSHR (0.36) TSHRALDH1A1GAA
SCHEMBL10358021 0.67 TSHR (0.39) TSHRALDH1A1GAA
SCHEMBL24507862 0.65 TSHR (0.30) TSHR
SCHEMBL23735441 0.65 TSHR (0.30) TSHR
SCHEMBL7049334 0.63
SCHEMBL9893555 0.62 TDP1 (0.33) TSHR
SCHEMBL14086336 0.58
SCHEMBL675832 0.57
SCHEMBL297576 0.57

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2463404-B1 METHOD FOR FORMING SIO2 FILM VERSUM MAT US LLC (US) 2019-10-23 EP claimed
EP-2251899-B1 Dielectric barrier deposition using nitrogen containing precursor VERSUM MAT US LLC (US) 2018-03-28 EP claimed
US-8889235-B2 Dielectric barrier deposition using nitrogen containing precursor AIR PRODUCTS AND CHEMICALS, INC. (US) 2014-11-18 US claimed
US-20140065844-A1 Amino Vinylsilane Precursors for Stressed SiN Films VERSUM MATERIALS US, LLC 2014-03-06 US claimed
US-8580993-B2 Amino vinylsilane precursors for stressed SiN films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-11-12 US claimed
US-8460753-B2 Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-06-11 US claimed
EP-2192207-B1 Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films AIR PROD & CHEM (US) 2012-06-20 EP claimed
US-20120148745-A1 Aminovinylsilane for CVD and ALD SiO2 Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-06-14 US claimed
EP-2463404-A1 Aminovinylsilane for cvd and ald sio2 films Air Products and Chemicals, Inc. (US) 2012-06-13 EP claimed
US-20100291321-A1 Dielectric Barrier Deposition Using Nitrogen Containing Precursor AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-11-18 US claimed
EP-2251899-A1 Dielectric barrier deposition using nitrogen containing precursor Air Products and Chemicals, Inc. (US) 2010-11-17 EP claimed
EP-2192207-A1 Amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-06-02 EP claimed
US-20100120262-A1 Amino Vinylsilane Precursors for Stressed SiN Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-05-13 US claimed
EP-2463404-B1 METHOD FOR FORMING SIO2 FILM VERSUM MAT US LLC (US) 2019-10-23 EP disclosed
EP-2228465-B1 Methods for making dielectric films comprising silicon VERSUM MAT US LLC (US) 2018-05-23 EP disclosed
EP-2251899-B1 Dielectric barrier deposition using nitrogen containing precursor VERSUM MAT US LLC (US) 2018-03-28 EP disclosed
EP-2228465-A1 Methods for making dielectric films comprising silicon Air Products and Chemicals, Inc. (US) 2010-09-15 EP disclosed
EP-2192207-A1 Amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-06-02 EP disclosed
EP-2192207-A1 Amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-06-02 EP disclosed
US-20100120262-A1 Amino Vinylsilane Precursors for Stressed SiN Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-05-13 US disclosed