SCHEMBL3138366

SCHEMBL3138366

C=Cc1ccc(C(C(F)(F)F)C(F)(F)F)cc1

nearest known ligand 0.50

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.50
TSHR P16473 1/20 0.39
TDP1 Q9NUW8 1/20 0.34
HDAC8 Q9BY41 1/20 0.33
HSD17B2 P37059 1/20 0.33
ESR1 P03372 1/20 0.33
ESR2 Q92731 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7647445 0.80 ESR1 (0.46) ESR1ESR2
SCHEMBL21947723 0.78 ALDH1A1 (0.46) ALDH1A1TSHRTDP1HDAC8HSD17B2
SCHEMBL3275977 0.77 TYR (0.52) ALDH1A1ESR1ESR2
SCHEMBL6314694 0.75 TP53 (0.44) ALDH1A1TSHRTDP1
SCHEMBL9570579 0.75 ALDH1A1 (0.42) ALDH1A1TSHRTDP1HSD17B2
SCHEMBL17388520 0.75 ALDH1A1 (0.42) ALDH1A1TSHRTDP1HSD17B2
Potassium Ion SCHEMBL15955811 0.74 ALDH1A1 (0.41) ALDH1A1TSHRTDP1HSD17B2
SCHEMBL9570862 0.74 ALDH1A1 (0.41) ALDH1A1TSHRTDP1HSD17B2ESR1
SCHEMBL17288936 0.73 ALDH1A1 (0.58) ALDH1A1TSHRTDP1HDAC8HSD17B2
SCHEMBL6946790 0.72 ALDH1A1 (0.65) ALDH1A1TSHRTDP1HDAC8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6872504-B2 High sensitivity X-ray photoresist MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2005-03-29 US claimed
US-6794109-B2 POLYMER CONTAINING A FLUORINATED STYRENE COPOLYMER MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2004-09-21 US claimed
US-20040110091-A1 High sensitivity X-ray photoresist MASS INSTITUTE OF TECHNOLOGY (MIT) 2004-06-10 US claimed
US-20020160297-A1 Low abosorbing resists for 157 nm lithography AIR FORCE, UNITED STATES 2002-10-31 US claimed
WO-2002069043-A2 LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2002-09-06 WO claimed
US-10641938-B2 Film forming composition, hardcoat film, polarizing plate, and method for manufacturing hydrophilized hardcoat film FUJIFILM CORPORATION (JP) 2020-05-05 US disclosed
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-7696210-B2 Gonadotropin releasing hormone receptor antagonists WYETH (US) 2010-04-13 US disclosed
US-7696210-B2 Gonadotropin releasing hormone receptor antagonists WYETH (US) 2010-04-13 US disclosed
US-7696210-B2 Gonadotropin releasing hormone receptor antagonists WYETH (US) 2010-04-13 US disclosed
US-7687228-B2 Antireflection film composition and patterning process using the same SHIN ETSU CHEMICAL CO., LTD. (JP) 2010-03-30 US disclosed
US-20080227037-A1 Resist lower layer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-18 US disclosed
US-6794109-B2 POLYMER CONTAINING A FLUORINATED STYRENE COPOLYMER MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2004-09-21 US disclosed
US-20040110091-A1 High sensitivity X-ray photoresist MASS INSTITUTE OF TECHNOLOGY (MIT) 2004-06-10 US disclosed
US-20040034160-A1 Acetal protected polymers and photoresists compositions thereof ARCH SPECIALITY CHEMICALS, INC. 2004-02-19 US disclosed
US-6680157-B1 MIXING WITH AROMATIC COMPOUND MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2004-01-20 US disclosed
WO-2003099782-A2 ACETAL PROTECTED POLYMERS AND PHOTORESISTS COMPOSITIONS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2003-12-04 WO disclosed
US-20020160297-A1 Low abosorbing resists for 157 nm lithography AIR FORCE, UNITED STATES 2002-10-31 US disclosed
WO-2002069043-A2 LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2002-09-06 WO disclosed
WO-2002031598-A2 RESIST METHODS AND MATERIALS FOR UV AND ELECTRON-BEAM LITHOGRAPHY WITH REDUCED OUTGASSING MASSACHUSETTS INSTITUTE OF TECHNOLOGY, INC. (US) 2002-04-18 WO disclosed