SCHEMBL3145381

SCHEMBL3145381

O=[C]c1cc(I)cc(I)c1O

nearest known ligand 0.56

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TTR P02766 2/20 0.56
ERN1 O75460 1/20 0.47
ALB P02768 1/20 0.37
MEN1 O00255 1/20 0.34
LMNA P02545 1/20 0.34
HTT P42858 1/20 0.34
KMT2A Q03164 1/20 0.34
GABRA1 P14867 1/20 0.32
GABRB1 P18505 1/20 0.32
GABRB2 P47870 1/20 0.32
CYP1A2 P05177 1/20 0.32
CYP2C9 P11712 1/20 0.32
HIF1A Q16665 1/20 0.32
HSD17B10 Q99714 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7103109 0.77 TTR (0.56) TTRERN1ALBMEN1LMNA
SCHEMBL7792827 0.76 TTR (0.36) TTRERN1
Triiodophenol SCHEMBL338137 0.74 TTR (1.00) TTRERN1ALBMEN1LMNA
SCHEMBL5303099 0.70 TTR (0.59) TTRERN1ALBMEN1LMNA
SCHEMBL425350 0.68 TTR (0.56) TTRERN1MEN1HTTKMT2A
SCHEMBL29396210 0.68 TTR (0.56) TTRERN1MEN1HTTKMT2A
SCHEMBL28278148 0.67 TTR (0.41) TTRERN1
SCHEMBL95554 0.67 ERN1 (0.31) TTRERN1
SCHEMBL23803707 0.67 TTR (0.54) TTRERN1MEN1HTTKMT2A
SCHEMBL340511 0.67 TTR (0.54) TTRERN1MEN1HTTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8603731-B2 Resist underlayer film forming composition for electron beam lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-12-10 US disclosed
EP-2120095-B1 USE OF A COMPOSITION FOR FORMING A RESIST LOWER LAYER FILM FOR ELECTRON LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2013-04-24 EP disclosed
US-7736822-B2 Resist underlayer coating forming composition for mask blank, mask blank and mask HOYA CORPORATION (JP) 2010-06-15 US disclosed
US-20100081081-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR ELECTRON BEAM LITHOGRAPHY NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-04-01 US disclosed
EP-2120095-A1 RESIST LOWER LAYER FILM FORMING COMPOSITION FOR ELECTRON LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2009-11-18 EP disclosed
US-20070190459-A1 Resist underlayer coating forming composition for mask blank, mask blank and mask HOYA CORPORATION (JP) 2007-08-16 US disclosed