Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 2/20 | 0.34 |
| ▸ | CA1 | P00915 | 1/20 | 0.32 |
| ▸ | CA2 | P00918 | 1/20 | 0.32 |
| ▸ | CA4 | P22748 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | NPC1 | O15118 | 2/20 | 0.31 |
| ▸ | RAB9A | P51151 | 2/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3050937 | 0.95 | — | — | |
| SCHEMBL3881615 | 0.84 | CA2 (0.32) | CA1CA2 | |
| SCHEMBL3876404 | 0.83 | CA2 (0.33) | CA1CA2 | |
| SCHEMBL3871402 | 0.76 | CA1 (0.32) | MAPTCA1CA2CA4KMT2A | |
| SCHEMBL3869288 | 0.76 | — | — | |
| SCHEMBL3880044 | 0.75 | MAPT (0.53) | MAPTKMT2AALDH1A1NPC1RAB9A | |
| SCHEMBL5866310 | 0.74 | KDM4E (0.34) | MAPTCA1CA2CA4NPC1 | |
| SCHEMBL6329621 | 0.74 | CA1 (0.33) | MAPTCA1CA2CA4KMT2A | |
| SCHEMBL8688174 | 0.72 | — | — | |
| Hydrogen Sulfide SCHEMBL3629966 | 0.71 | MAPT (0.37) | MAPTCA1CA2CA4KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180004086-A1 | NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD OF SPACER, PRODUCTION METHOD OF PROTECTION FILM, AND LIQUID CRYSTAL DISPLAY DEVICE | CHI MEI CORPORATION (TW) | 2018-01-04 | — | — | US | disclosed |
| US-20150173479-A1 | Methods for Shaping Fibrous Material and Treatment Compositions Therefor | THE PROCTER & GAMBLE COMPANY | 2015-06-25 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-7687228-B2 | Antireflection film composition and patterning process using the same | SHIN ETSU CHEMICAL CO., LTD. (JP) | 2010-03-30 | — | — | US | disclosed |
| US-7655378-B2 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-02 | — | — | US | disclosed |
| US-7638268-B2 | Rework process for photoresist film | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2009-12-29 | — | — | US | disclosed |
| US-7629106-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-08 | — | — | US | disclosed |
| US-7585613-B2 | comprising light absorbing silicone resin, acid generator generates acid upon exposure to radiation; photoresist pattern cover the antireflection film with a vertical wall profile, without intermixing, less damage to an underlying layer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-08 | — | — | US | disclosed |
| US-7521169-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2009-04-21 | — | — | US | disclosed |
| US-20080220381-A1 | Antireflection film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-11 | — | — | US | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-20050142491-A1 | Novel epoxy compounds having an alicyclic structure, polymer compounds, resist materials, and patterning methods | HASEGAWA KOJI (JP) | 2005-06-30 | — | — | US | disclosed |
| US-6852791-B2 | Anti-reflection coating forming composition | JSR CORPORATION (JP) | 2005-02-08 | — | — | US | disclosed |
| US-20030108819-A1 | Resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-06-12 | — | — | US | disclosed |
| US-20020147290-A1 | Cyclic acetal compound, polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-10 | — | — | US | disclosed |
| US-20020048724-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-25 | — | — | US | disclosed |
| EP-0849634-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-06-24 | — | — | EP | disclosed |
| US-5756850-A | ARGON FLUORIDE EXCIMER LASER LITHOGRAPHY WITH ACID GENERATING RESINS WITH SULFONIUM SALTS | NEC CORPORATION (JP) | 1998-05-26 | — | — | US | disclosed |
| US-5635332-A | MIXTURE WITH ULTRAVIOLET TRANSPARENT POLYMER HAVING GROUPS WHICH ARE UNSTABLE TO ACID | NEC CORPORATION (JP) | 1997-06-03 | — | — | US | disclosed |
| US-5585507-A | FINENESS PATTERNS | NEC CORPORATION (JP) | 1996-12-17 | — | — | US | disclosed |