Phosphoric Acid

Phosphoric Acid

SCHEMBL316576

NOP(=O)(O)O.NOP(=O)(O)O.NOP(=O)(O)O.O=P(O)(O)O

nearest known ligand 0.47

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

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

The experimentally established mechanism targets of Phosphoric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
FDPS P14324 1/20 0.47
BLM P54132 1/20 0.47
TDP1 Q9NUW8 1/20 0.47
CA4 P22748 1/20 0.42
INPP5A Q14642 3/20 0.33
INPPL1 O15357 2/20 0.33
SMPD1 P17405 1/20 0.33
INPP5B P32019 1/20 0.33
CA2 P00918 1/20 0.33
TPI1 P60174 1/20 0.32
ITPR3 Q14573 6/20 0.32
ITPR2 Q14571 3/20 0.32
ITPR1 Q14643 3/20 0.32
SLC34A1 Q06495 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Phosphoric Acid SCHEMBL5182164 1.00 FDPS (0.47) FDPSBLMTDP1CA4INPP5A
SCHEMBL8615162 0.96 FDPS (0.50) FDPSBLMTDP1CA4INPP5A
SCHEMBL37063 0.96
Water SCHEMBL8810453 0.92
Ammonia Solution, Strong SCHEMBL4163138 0.92
SCHEMBL27453277 0.92
SCHEMBL11749825 0.92
Hydrochloric Acid SCHEMBL146283 0.92
SCHEMBL1098223 0.92
SCHEMBL10338371 0.92

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 78 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11242550-B2 High-throughput enzymatic preparation of glucosylated steviol glycosides under programming temperatures JIANGNAN UNIVERSITY (CN) 2022-02-08 US claimed
CN-108192937-B Method for preparing glucosyl stevioside at high flux by enzymatic temperature change 江南大学 2020-08-04 CN claimed
US-20190218585-A1 High-Throughput Enzymatic Preparation of Glucosylated Steviol Glycosides under Programming Temperatures Dongtai Haorui Biotechnology Co., Ltd. (CN) 2019-07-18 US claimed
CN-108192937-A A kind of method that enzymatic alternating temperature high throughput prepares glucosyl group steviol glycoside 江南大学 2018-06-22 CN claimed
CN-101779274-B Compositions and methods for modifying a surface suited for semiconductor fabrication 3M INNOVATIVE PROPERTIES CO 2012-09-05 CN claimed
JP-2010537404-A 2010-12-02 JP claimed
CN-101779274-A Be used to modify the composition and the method on the surface that is suitable for semiconductor fabrication 3M INNOVATIVE PROPERTIES CO 2010-07-14 CN claimed
EP-2186121-A2 COMPOSITIONS AND METHODS FOR MODIFYING A SURFACE SUITED FOR SEMICONDUCTOR FABRICATION 3M Innovative Properties Company (US) 2010-05-19 EP claimed
WO-2009023387-A2 COMPOSITIONS AND METHODS FOR MODIFYING A SURFACE SUITED FOR SEMICONDUCTOR FABRICATION 3M INNOVATIVE PROPERTIES COMPANY (US) 2009-02-19 WO claimed
US-20080026583-A1 COMPOSITIONS AND METHODS FOR MODIFYING A SURFACE SUITED FOR SEMICONDUCTOR FABRICATION 3M INNOVATIVE PROPERTIES COMPANY 2008-01-31 US claimed
JP-7194686-A None JP disclosed
US-11242550-B2 High-throughput enzymatic preparation of glucosylated steviol glycosides under programming temperatures JIANGNAN UNIVERSITY (CN) 2022-02-08 US disclosed
US-20210189175-A1 POLISHING SYSTEMS AND METHOD OF MAKING AND USING SAME 3M INNOVATIVE PROPERTIES COMPANY 2021-06-24 US disclosed
EP-3049215-B1 COMPOSITE CERAMIC ABRASIVE POLISHING SOLUTION 3M INNOVATIVE PROPERTIES CO (US) 2021-04-14 EP disclosed
CN-108192937-B Method for preparing glucosyl stevioside at high flux by enzymatic temperature change 江南大学 2020-08-04 CN disclosed
EP-1016133-A1 METHOD OF PLANARIZING THE UPPER SURFACE OF A SEMICONDUCTOR WAFER MINNESOTA MINING AND MANUFACTURING COMPANY (US) 2000-07-05 EP disclosed
CN-1254441-A Method of planarizing upper surface of semiconductor wafer MINNESOTA MINING & MFG (US) 2000-05-24 CN disclosed
WO-1998049723-A1 METHOD OF PLANARIZING THE UPPER SURFACE OF A SEMICONDUCTOR WAFER MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1998-11-05 WO disclosed
JP-H07194686-A BIOMEDICAL CEMENT POLA CHEM IND INC 1995-08-01 JP disclosed
WO-1991000327-A1 FIRE RETARDANTS AND PRODUCTS PRODUCED THEREWITH OBERLEY WILLIAM J (US) 1991-01-10 WO disclosed