SCHEMBL3273950

SCHEMBL3273950

C1CCCC(C2CCCCCC2)CC1.C1CCCC(C2CCCCCC2)CC1.CCCO[SiH2]OCCC

nearest known ligand 0.37

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.36
CYP1A2 P05177 2/20 0.33
ADH1A P07327 1/20 0.31
CYP2D6 P10635 1/20 0.30
CYP2C19 P33261 1/20 0.30
SHBG P04278 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27987599 0.98 ALDH1A1 (0.38) ALDH1A1CYP1A2CYP2D6CYP2C19
SCHEMBL1974323 0.85
SCHEMBL27987598 0.84 CYP1A2 (0.37) ALDH1A1CYP1A2
SCHEMBL28222613 0.81 ALDH1A1 (0.40) ALDH1A1CYP1A2SHBG
SCHEMBL3839878 0.81 ALDH1A1 (0.40) ALDH1A1CYP1A2SHBG
Biphenyl SCHEMBL3842729 0.81 ALDH1A1 (0.40) ALDH1A1CYP1A2SHBG
SCHEMBL27987597 0.78 ALDH1A1 (0.42) ALDH1A1
SCHEMBL9247765 0.77
SCHEMBL124699 0.77
SCHEMBL28023311 0.76 ALDH1A1 (0.40) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2628744-B1 Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process SHINETSU CHEMICAL CO (JP) 2016-11-30 EP claimed
EP-4012499-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2022-06-15 EP disclosed
EP-2657767-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2018-10-10 EP disclosed
EP-2826826-B1 COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE FORMED A FILM BY SAID COMPOSITION, AND PATTERNING PROCESS USING SAID COMPOSITION SHINETSU CHEMICAL CO (JP) 2018-08-01 EP disclosed
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-20180081272-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 US disclosed
EP-2657766-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2018-02-28 EP disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9880470-B2 Composition for forming a coating type silicon-containing film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-30 US disclosed
US-9580623-B2 Patterning process using a boron phosphorus silicon glass film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-28 US disclosed
EP-2657766-A1 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-10-30 EP disclosed
EP-2628744-A1 Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-08-21 EP disclosed
EP-2599818-A1 Silicon-containing resist underlayer film-forming composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-05 EP disclosed
EP-2599819-A1 Silicon-containing resist underlayer film-forming composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-05 EP disclosed
US-20130137041-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-20130137271-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20100086870-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
EP-2172807-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed