SCHEMBL3273986

SCHEMBL3273986

C1CCCC(C2CCCCCC2)CC1.C1CCCC(C2CCCCCC2)CC1.CC(C)O[SiH2]OC(C)C

nearest known ligand 0.44

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.40
SHBG P04278 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28236997 1.00 ALDH1A1 (0.40) ALDH1A1SHBG
Biphenyl SCHEMBL3836338 1.00 ALDH1A1 (0.40) ALDH1A1SHBG
SCHEMBL28236989 0.97 ALDH1A1 (0.42) ALDH1A1
SCHEMBL28236993 0.87
SCHEMBL7924004 0.77 SHBG (0.39) SHBG
Hydrochloric Acid SCHEMBL27663825 0.71
SCHEMBL27839497 0.71
Biphenyl SCHEMBL2855816 0.70 ALDH1A1 (0.47) ALDH1A1
SCHEMBL28221838 0.70 ALDH1A1 (0.47) ALDH1A1
SCHEMBL28236980 0.70 ALDH1A1 (0.47) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2628744-B1 Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process SHINETSU CHEMICAL CO (JP) 2016-11-30 EP claimed
CN-114660896-B Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound 信越化学工业株式会社 2024-06-11 CN disclosed
CN-116804825-A Composition for forming silicon-containing metal hard mask and pattern forming method 信越化学工业株式会社 2023-09-26 CN disclosed
CN-111458980-B Composition for forming underlayer film of silicon-containing resist and method for forming pattern 信越化学工业株式会社 2023-08-11 CN disclosed
CN-114660896-A Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound 信越化学工业株式会社 2022-06-24 CN disclosed
EP-4012499-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2022-06-15 EP disclosed
CN-114594657-A Composition for forming silicon-containing resist underlayer film and pattern formation method 信越化学工业株式会社 2022-06-07 CN disclosed
CN-112526822-A Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2021-03-19 CN disclosed
CN-112286000-A Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2021-01-29 CN disclosed
CN-111856882-A Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2020-10-30 CN disclosed
EP-2657240-A1 Silicon compound, silicon-containing compound, composition for forming resits underlayer film containing the same and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-10-30 EP disclosed
EP-2628744-A1 Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-08-21 EP disclosed
EP-2599818-A1 Silicon-containing resist underlayer film-forming composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-05 EP disclosed
EP-2599819-A1 Silicon-containing resist underlayer film-forming composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-05 EP disclosed
US-20130137041-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-20130137271-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20100086870-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
EP-2172807-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed