SCHEMBL3274091

SCHEMBL3274091

C1CCCC(C2CCCCCC2)CC1.CC(C)O[SiH](OC(C)C)OC(C)C

nearest known ligand 0.40

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.40
SHBG P04278 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL106461 0.74
Fluoride SCHEMBL27859121 0.71
SCHEMBL3837099 0.70 ALDH1A1 (0.47) ALDH1A1
SCHEMBL28891532 0.70
SCHEMBL7760066 0.70 SHBG (0.32) SHBG
Biphenyl SCHEMBL3836338 0.70 ALDH1A1 (0.40) ALDH1A1SHBG
SCHEMBL9056587 0.69 ALDH1A1 (0.44) ALDH1A1SHBG
SCHEMBL23106312 0.68 SHBG (0.31) SHBG
Methoxymethane SCHEMBL4178435 0.68 ALDH1A1 (0.61) ALDH1A1SHBG
Methoxymethane SCHEMBL4182037 0.68 ALDH1A1 (0.61) ALDH1A1SHBG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2628744-B1 Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process SHINETSU CHEMICAL CO (JP) 2016-11-30 EP claimed
CN-116804825-A Composition for forming silicon-containing metal hard mask and pattern forming method 信越化学工业株式会社 2023-09-26 CN disclosed
CN-111458980-B Composition for forming underlayer film of silicon-containing resist and method for forming pattern 信越化学工业株式会社 2023-08-11 CN disclosed
CN-108473684-B Process for producing siloxane polymer 东丽精细化工株式会社 2023-05-12 CN disclosed
CN-111856882-A Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2020-10-30 CN disclosed
US-10109485-B2 Silicon-containing condensate, composition for forming a silicon-containing resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-10-23 US disclosed
EP-2657767-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2018-10-10 EP disclosed
EP-2826826-B1 COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE FORMED A FILM BY SAID COMPOSITION, AND PATTERNING PROCESS USING SAID COMPOSITION SHINETSU CHEMICAL CO (JP) 2018-08-01 EP disclosed
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-20180081272-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 US disclosed
EP-2628744-A1 Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-08-21 EP disclosed
US-20130210236-A1 SILICON-CONTAINING SURFACE MODIFIER, RESIST UNDERLAYER FILM COMPOSITION CONTAINING THIS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-15 US disclosed
EP-2599818-A1 Silicon-containing resist underlayer film-forming composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-05 EP disclosed
EP-2599819-A1 Silicon-containing resist underlayer film-forming composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-05 EP disclosed
US-20130137271-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-20130137041-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
US-20100086870-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
EP-2172807-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed