⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL61894 | 0.87 | — | — | |
| SCHEMBL2119594 | 0.87 | — | — | |
| Selenium SCHEMBL1205577 | 0.75 | — | — | |
| SCHEMBL9898240 | 0.75 | — | — | |
| SCHEMBL347972 | 0.75 | — | — | |
| SCHEMBL3746078 | 0.75 | — | — | |
| SCHEMBL1204245 | 0.75 | — | — | |
| SCHEMBL9898340 | 0.75 | — | — | |
| SCHEMBL1205976 | 0.75 | — | — | |
| Arsenic SCHEMBL347971 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111129066-B | Phase change random access memory device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2022-08-02 | — | — | CN | claimed |
| US-8513051-B2 | Methods of forming phase-changeable memory devices including an adiabatic layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-08-20 | — | — | US | claimed |
| US-20100144087-A1 | METHODS OF FORMING PHASE-CHANGEABLE MEMORY DEVICES INCLUDING AN ADIABATIC LAYER | HA YONG-HO | 2010-06-10 | — | — | US | claimed |
| US-20100096609-A1 | PHASE CHANGE MEMORY DEVICE HAVING A LAYERED PHASE CHANGE LAYER COMPOSED OF MULTIPLE PHASE CHANGE MATERIALS AND METHOD FOR MANUFACTURING THE SAME | HYNIX SEMICONDUCTOR INC. (KR) | 2010-04-22 | — | — | US | claimed |
| US-7692176-B2 | Phase-changeable memory devices including an adiabatic layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-04-06 | — | — | US | claimed |
| US-20060039192-A1 | Phase-changeable memory devices including an adiabatic layer and methods of forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-02-23 | — | — | US | claimed |
| CN-111129066-B | Phase change random access memory device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2022-08-02 | — | — | CN | disclosed |
| US-8599607-B2 | Diode and memory device having a diode | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (SG) | 2013-12-03 | — | — | US | disclosed |
| US-8513051-B2 | Methods of forming phase-changeable memory devices including an adiabatic layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-08-20 | — | — | US | disclosed |
| CN-102097374-B | Phase change random access memory and manufacturing method thereof | SEMICONDUCTOR MFG INT SHANGHAI | 2013-07-17 | — | — | CN | disclosed |
| US-20120147668-A1 | Diode and Memory Device Having a Diode | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH | 2012-06-14 | — | — | US | disclosed |
| CN-101958248-B | PN junction diode, phase change random access memory and manufacturing method thereof | SEMICONDUCTOR MFG INT SHANGHAI | 2012-05-23 | — | — | CN | disclosed |
| CN-102347442-A | Method for making phase change memory structure | SEMICONDUCTOR MFG INT SHANGHAI | 2012-02-08 | — | — | CN | disclosed |
| US-20080093591-A1 | Storage nodes, phase change memory devices, and methods of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD | 2008-04-24 | — | — | US | disclosed |
| US-20080050892-A1 | Method of manufacturing a thin film structure, method of manufacturing a storage node using the same, method of manufacturing a phase change random access memory using the same and a thin film structure, a storage node and a phase change random access memory formed using the same | SAMSUNG ELECTRONICS CO., LTD. | 2008-02-28 | — | — | US | disclosed |
| CN-101093873-A | GESBTE thin film manufacturing method, phase-change direct-access storage and manufacturing method therefor | SAMSUNG ELECTRONICS CO LTD (KR) | 2007-12-26 | — | — | CN | disclosed |
| US-20070267669-A1 | Phase-changeable memory device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-11-22 | — | — | US | disclosed |
| CN-101030593-A | Phase change random access memory and methods of fabricating the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2007-09-05 | — | — | CN | disclosed |
| US-20070200108-A1 | Storage node, phase change random access memory and methods of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. | 2007-08-30 | — | — | US | disclosed |
| US-20060039192-A1 | Phase-changeable memory devices including an adiabatic layer and methods of forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-02-23 | — | — | US | disclosed |