Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1053435 | 0.84 | CA2 (0.31) | CA2 | |
| SCHEMBL28282053 | 0.84 | CA2 (0.31) | CA2 | |
| SCHEMBL29281759 | 0.79 | — | — | |
| SCHEMBL8441753 | 0.78 | FAAH (0.30) | — | |
| SCHEMBL4265048 | 0.77 | — | — | |
| SCHEMBL423208 | 0.77 | — | — | |
| SCHEMBL1050079 | 0.77 | — | — | |
| SCHEMBL28601036 | 0.75 | — | — | |
| SCHEMBL31477856 | 0.75 | — | — | |
| SCHEMBL1278342 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 143 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110591610-A | Pressure-sensitive adhesive | 上海固柯胶带科技有限公司 | 2019-12-20 | — | — | CN | claimed |
| US-8039049-B2 | Treatment of low dielectric constant films using a batch processing system | TOKYO ELECTRON LIMITED (JP) | 2011-10-18 | — | — | US | claimed |
| JP-4662718-B2 | — | — | 2011-03-30 | — | — | JP | claimed |
| US-7445953-B2 | Low temperature curable materials for optical applications | HONEYWELL INTERNATIONAL INC. (US) | 2008-11-04 | — | — | US | claimed |
| US-7405168-B2 | Plural treatment step process for treating dielectric films | TOKYO ELECTRON LIMITED (JP) | 2008-07-29 | — | — | US | claimed |
| US-7381441-B2 | Low metal porous silica dielectric for integral circuit applications | HONEYWELL INTERNATIONAL INC. (US) | 2008-06-03 | — | — | US | claimed |
| US-7381442-B2 | Porogens for porous silica dielectric for integral circuit applications | HONEYWELL INTERNATIONAL INC. (US) | 2008-06-03 | — | — | US | claimed |
| US-20080076262-A1 | METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM | TOKYO ELECTRON LIMITED (JP) | 2008-03-27 | — | — | US | claimed |
| US-7345000-B2 | Method and system for treating a dielectric film | TOKYO ELECTRON LIMITED (JP) | 2008-03-18 | — | — | US | claimed |
| WO-2008014630-A1 | PHOTOSENSITIVE MATERIALS AND USES THEREOF | HONEYWELL INTERNATIONAL, INC. (US) | 2008-02-07 | — | — | WO | claimed |
| JP-2005522878-A | — | — | 2005-07-28 | — | — | JP | claimed |
| US-20050136687-A1 | Porous silica dielectric having improved etch selectivity towards inorganic anti-reflective coating materials for integrated circuit applications, and methods of manufacture | HONEYWELL INTERNATIONAL INC | 2005-06-23 | — | — | US | claimed |
| US-20050123735-A1 | Porogens for porous silica dielectric for integral circuit applications | HONEYWELL INTERNATIONAL INC | 2005-06-09 | — | — | US | claimed |
| US-20050106376-A1 | Low metal porous silica dielectric for integral circuit applications | HONEYWELL INTERNATIONAL INC | 2005-05-19 | — | — | US | claimed |
| WO-2003088343-A1 | NEW POROGENS FOR POROUS SILICA DIELECTRIC FOR INTEGRAL CIRCUIT APPLICATIONS | HONEYWELL INTERNATIONAL, INC. (US) | 2003-10-23 | — | — | WO | claimed |
| WO-2003088344-A1 | LOW METAL POROUS SILICA DIELECTRIC FOR INTEGRAL CIRCUIT APPLICATIONS | HONEYWELL INTERNATIONAL, INC. (US) | 2003-10-23 | — | — | WO | claimed |
| EP-1327260-A2 | SIMPLIFIED METHOD TO PRODUCE NANOPOROUS SILICON-BASED FILMS | Honeywell International Inc. (US) | 2003-07-16 | — | — | EP | claimed |
| US-20030077918-A1 | Simplified method to produce nanoporous silicon-based films | WU HUI-JUNG (US) | 2003-04-24 | — | — | US | claimed |
| US-6495479-B1 | COATING WITH SUCH AS TETRAACETOXYSILANE AND A POROGEN, AGING OR CONDENSING IN PRESENCE OF WATER AND HEATING THE GELLED FILM | HONEYWELL INTERNATIONAL, INC. | 2002-12-17 | — | — | US | claimed |
| WO-2001086709-A2 | SIMPLIFIED METHOD TO PRODUCE NANOPOROUS SILICON-BASED FILMS | HONEYWELL INTERNATIONAL INC. (US) | 2001-11-15 | — | — | WO | claimed |