SCHEMBL332860

SCHEMBL332860

[CH2]OC1C2CC3CC(C2)C(=O)C1C3

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5093293 0.85
SCHEMBL4808839 0.81
SCHEMBL16471018 0.77
SCHEMBL13327528 0.77
SCHEMBL855803 0.77
SCHEMBL12854401 0.77
SCHEMBL9150172 0.76 HSD11B1 (0.32)
SCHEMBL853996 0.76
SCHEMBL10054242 0.76
SCHEMBL13008684 0.76 KMT2A (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8859187-B2 Method of forming resist pattern and negative resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2014-10-14 US disclosed
EP-1895576-B1 PATTERN FORMING METHOD TOKYO OHKA KOGYO CO LTD (JP) 2014-07-23 EP disclosed
US-8349543-B2 Pattern-forming method, metal oxide film-forming material and method for using the metal oxide film-forming material TOKYO OHKA KOGYO CO. LTD. (JP) 2013-01-08 US disclosed
US-8124312-B2 Method for forming pattern, and material for forming coating film TOKYO OHKA KOGYO CO., LTD. (JP) 2012-02-28 US disclosed
US-8101013-B2 Film-forming material and method of forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-24 US disclosed
US-8097396-B2 Reduced defects; improved shape and stability of latent image; comprised of acrylate copolymer having lactone ring and polycyclic ring containing monomers; increased alkali solubility under action of acid generator upon exposure TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-17 US disclosed
US-8043795-B2 Method of forming resist pattern TOKYO OHIKA KOGYO CO., LTD. (JP) 2011-10-25 US disclosed
US-8025923-B2 Method for manufacturing a structure TOKYO OHKA KOGYO CO., LTD. (JP) 2011-09-27 US disclosed
US-7932013-B2 Pattern coating material and pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-26 US disclosed
US-7767378-B2 Mixing a blend of copolymers of identical structural units but have mutually different measured values for a contact angle; mixing conditions for plurality of copolymers are adjusted so that a measured value of a contact angle for said resist composition is no higher than 40 degrees to avoid defects TOKYO OHKA KOGYO CO., LTD. (JP) 2010-08-03 US disclosed
US-20090134119-A1 FILM-FORMING MATERIAL AND METHOD OF FORMING PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-28 US disclosed
US-20090098489-A1 METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-16 US disclosed
US-20090087625-A1 METHOD FOR MANUFACTURING STRUCTURE, AND STRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-02 US disclosed
US-20090061170-A1 ANISOTROPIC FILM AND METHOD OF MANUFACTURING ANISOTROPIC FILM TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-05 US disclosed
US-20090042129-A1 POSITIVE RESIST COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-12 US disclosed
US-20090029288-A1 METHOD FOR PRODUCING RESIST COMPOSITION AND RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-29 US disclosed
US-20090029284-A1 PATTERN COATING MATERIAL AND PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-29 US disclosed
US-20080063974-A1 Positive Resist Composition and Method for Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-03-13 US disclosed
EP-1895576-A1 PATTERN COATING MATERIAL AND PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2008-03-05 EP disclosed
EP-1813990-A1 METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-01 EP disclosed