SCHEMBL855803

SCHEMBL855803

O=C1C2CC3CC(C2)C(OCCl)C1C3

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16471018 1.00
SCHEMBL13327528 0.83
SCHEMBL4811947 0.82
SCHEMBL13094607 0.81
SCHEMBL8944570 0.81
SCHEMBL5093293 0.80
SCHEMBL14365414 0.78 CTSV (0.31)
SCHEMBL332860 0.77
SCHEMBL13809878 0.77
SCHEMBL4809666 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2433972-B1 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2014-11-12 EP disclosed
EP-2433972-B1 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2014-11-12 EP disclosed
EP-1717261-B1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2014-01-01 EP disclosed
EP-2433972-A1 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern Tokyo Ohka Kogyo Co., Ltd. (JP) 2012-03-28 EP disclosed
US-7723007-B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-25 US disclosed
US-7723007-B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-25 US disclosed
US-7723007-B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-25 US disclosed
CN-100572422-C Macromolecular compound, the photo-corrosion-resisting agent composition that contains this macromolecular compound and corrosion-resisting pattern formation method TOKYO OHKA KOGYO CO LTD (JP) 2009-12-23 CN disclosed
US-7608381-B2 copolymer of an acrylate monomer containing a 20 membered cyclic group, an acrylate monomer of alpha-alkyl acrylate estre having a lactone containing monocyclic or polycyclic group, a lower alkylate ester having an aliphatic cyclic group containing non acid dissociable dissociation inhibiting group TOKYO OHKA KOGYO CO., LTD. (JP) 2009-10-27 US disclosed
US-7470824-B2 Adamantane derivative and process for producing the same IDEMITSU KOSAN CO., LTD. (JP) 2008-12-30 US disclosed
US-7470824-B2 Adamantane derivative and process for producing the same IDEMITSU KOSAN CO., LTD. (JP) 2008-12-30 US disclosed
US-20080193871-A1 Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-08-14 US disclosed
US-20080193871-A1 Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-08-14 US disclosed
US-20080193871-A1 Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-08-14 US disclosed
US-20080166655-A1 Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method OGATA TOSHIYUKI 2008-07-10 US disclosed
US-20080166655-A1 Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method OGATA TOSHIYUKI 2008-07-10 US disclosed
US-20080166655-A1 Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method OGATA TOSHIYUKI 2008-07-10 US disclosed
US-20080096126-A1 Polymer Compound, Positive Resist Composition and Process for Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-04-24 US disclosed
CN-1918217-A Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2007-02-21 CN disclosed
EP-1717261-A1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-11-02 EP disclosed