Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX2 | P34913 | 6/20 | 0.43 |
| ▸ | NPC1 | O15118 | 1/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.41 |
| ▸ | MEN1 | O00255 | 1/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.39 |
| ▸ | SLC22A2 | O15244 | 1/20 | 0.38 |
| ▸ | SLC47A1 | Q96FL8 | 1/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.37 |
| ▸ | TET2 | Q6N021 | 3/20 | 0.37 |
| ▸ | TET3 | O43151 | 1/20 | 0.37 |
| ▸ | TET1 | Q8NFU7 | 1/20 | 0.37 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | POLB | P06746 | 1/20 | 0.36 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.36 |
| ▸ | GAA | P10253 | 1/20 | 0.36 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.36 |
| ▸ | GRIK1 | P39086 | 1/20 | 0.36 |
| ▸ | GRIK2 | Q13002 | 1/20 | 0.36 |
| ▸ | GRM1 | Q13255 | 1/20 | 0.36 |
| ▸ | GRM2 | Q14416 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5412692 | 0.85 | DPP4 (0.41) | EPHX2ALDH1A1CYP3A4 | |
| SCHEMBL5419569 | 0.84 | ALDH1A1 (0.42) | EPHX2NPC1ALDH1A1KMT2APOLB | |
| SCHEMBL8097536 | 0.82 | ALDH1A1 (0.46) | EPHX2NPC1ALDH1A1MEN1KMT2A | |
| SCHEMBL14673444 | 0.73 | ALDH1A1 (0.44) | EPHX2NPC1ALDH1A1MEN1KMT2A | |
| Methacrylic Acid SCHEMBL12803308 | 0.73 | ALDH1A1 (0.44) | EPHX2NPC1ALDH1A1MEN1KMT2A | |
| SCHEMBL3674042 | 0.71 | ALDH1A1 (0.43) | EPHX2NPC1ALDH1A1MEN1KMT2A | |
| SCHEMBL2390569 | 0.69 | EPHX2 (0.40) | EPHX2NPC1ALDH1A1MEN1KMT2A | |
| SCHEMBL5901412 | 0.69 | TSHR (0.51) | EPHX2NPC1ALDH1A1MEN1KMT2A | |
| SCHEMBL14695859 | 0.69 | SLC22A2 (0.50) | EPHX2NPC1ALDH1A1MEN1KMT2A | |
| SCHEMBL704030 | 0.68 | ALDH1A1 (0.50) | EPHX2ALDH1A1MEN1KMT2ASMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8859187-B2 | Method of forming resist pattern and negative resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-10-14 | — | — | US | disclosed |
| EP-1895576-B1 | PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO LTD (JP) | 2014-07-23 | — | — | EP | disclosed |
| EP-1590709-B1 | PROCESS FOR REFINING CRUDE RESIN FOR RESIST | TOKYO OHKA KOGYO CO LTD (JP) | 2013-04-03 | — | — | EP | disclosed |
| US-8349543-B2 | Pattern-forming method, metal oxide film-forming material and method for using the metal oxide film-forming material | TOKYO OHKA KOGYO CO. LTD. (JP) | 2013-01-08 | — | — | US | disclosed |
| US-8101013-B2 | Film-forming material and method of forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-01-24 | — | — | US | disclosed |
| US-8097396-B2 | Reduced defects; improved shape and stability of latent image; comprised of acrylate copolymer having lactone ring and polycyclic ring containing monomers; increased alkali solubility under action of acid generator upon exposure | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-01-17 | — | — | US | disclosed |
| US-8043795-B2 | Method of forming resist pattern | TOKYO OHIKA KOGYO CO., LTD. (JP) | 2011-10-25 | — | — | US | disclosed |
| US-8025923-B2 | Method for manufacturing a structure | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-09-27 | — | — | US | disclosed |
| US-7932013-B2 | Pattern coating material and pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-04-26 | — | — | US | disclosed |
| US-7767378-B2 | Mixing a blend of copolymers of identical structural units but have mutually different measured values for a contact angle; mixing conditions for plurality of copolymers are adjusted so that a measured value of a contact angle for said resist composition is no higher than 40 degrees to avoid defects | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-08-03 | — | — | US | disclosed |
| US-20090042129-A1 | POSITIVE RESIST COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20090029288-A1 | METHOD FOR PRODUCING RESIST COMPOSITION AND RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-29 | — | — | US | disclosed |
| US-20090029284-A1 | PATTERN COATING MATERIAL AND PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-29 | — | — | US | disclosed |
| WO-2008066306-A1 | NORBORNENE POLYMER OR COPOLYMER AND METHOD OF PREPARING THE SAME | KOLON INDUSTRIES, INC. (KR) | 2008-06-05 | — | — | WO | disclosed |
| US-20080063974-A1 | Positive Resist Composition and Method for Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-03-13 | — | — | US | disclosed |
| EP-1895576-A1 | PATTERN COATING MATERIAL AND PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-03-05 | — | — | EP | disclosed |
| US-7276575-B2 | Process for refining crude resin for resist | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-10-02 | — | — | US | disclosed |
| WO-2007100223-A1 | NORBORNENE-ESTER POLYMER CONTAINING BULKY SUBSTITUENTS | KOLON INDUSTRIES, INC. (KR) | 2007-09-07 | — | — | WO | disclosed |
| EP-1813990-A1 | METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-08-01 | — | — | EP | disclosed |
| US-20060135745-A1 | Process for refining crude resin for resist | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-06-22 | — | — | US | disclosed |