SCHEMBL3337072

SCHEMBL3337072

[CH2]COC(CC)OCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25094 0.85
Ammonia Solution, Strong SCHEMBL27897772 0.82 THRB (0.47)
SCHEMBL7516401 0.78
SCHEMBL14633846 0.77 THRB (0.33)
SCHEMBL3188978 0.74
Ethylene Glycol SCHEMBL3139436 0.74 THRB (0.40)
SCHEMBL11255584 0.74 ALDH1A1 (0.32)
SCHEMBL27869153 0.74 THRB (0.31)
SCHEMBL14764576 0.73 THRB (0.44)
SCHEMBL55371 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220121116-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-04-21 US disclosed
US-20200166837-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-05-28 US disclosed
WO-2020054449-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 東京応化工業株式会社 2020-03-19 WO disclosed
WO-2020054563-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 東京応化工業株式会社 2020-03-19 WO disclosed
US-20140004467-A1 METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2014-01-02 US disclosed
US-8232040-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-07-31 US disclosed
US-20100143845-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-10 US disclosed