SCHEMBL3337531

SCHEMBL3337531

C=CCNCCCCC(C)(C)O[SiH3]

nearest known ligand 0.38

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.35
GAA P10253 2/20 0.35
CNR1 P21554 1/20 0.35
CNR2 P34972 1/20 0.35
KDM4E B2RXH2 5/20 0.33
KMT2A Q03164 3/20 0.33
MEN1 O00255 2/20 0.33
NPSR1 Q6W5P4 1/20 0.33
PAOX Q6QHF9 2/20 0.32
LMNA P02545 1/20 0.32
KDM1A O60341 3/20 0.31
SMOX Q9NWM0 1/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
CYP1A2 P05177 1/20 0.31
CYP3A4 P08684 1/20 0.31
CYP2D6 P10635 1/20 0.31
CYP2C19 P33261 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3338480 0.96 ALDH1A1 (0.35) ALDH1A1GAACNR1CNR2KDM4E
Hydrochloric Acid SCHEMBL28132779 0.76 KDM1A (0.36) ALDH1A1GAACNR1CNR2KDM4E
SCHEMBL3437722 0.75 TSHR (0.42) ALDH1A1KMT2AMEN1PAOXKDM1A
SCHEMBL976504 0.75 CA12 (0.44) ALDH1A1KDM4EKMT2AMEN1PAOX
SCHEMBL3023756 0.74 PAOX (0.50) ALDH1A1GAACNR1CNR2KDM4E
SCHEMBL12912359 0.74 ALDH1A1 (0.36) ALDH1A1GAACNR1CNR2KDM4E
SCHEMBL296165 0.74 TSHR (0.41) ALDH1A1LMNA
SCHEMBL29170851 0.74 TSHR (0.39) ALDH1A1LMNA
SCHEMBL296309 0.72 TSHR (0.44) ALDH1A1LMNACYP3A4SMN1; SMN2
SCHEMBL6037418 0.72 TSHR (0.44) ALDH1A1LMNACYP3A4SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed
US-4990641-A Crosslinking agent, modifier for composites TOSHIBA SILICONE CO., LTD. (JP) 1991-02-05 US disclosed