SCHEMBL3338092

SCHEMBL3338092

CC(=O)OC(C)CC(C)(C)O[SiH3]

nearest known ligand 0.44

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.44
CHRM2 P08172 1/20 0.44
CHRM4 P08173 1/20 0.44
CHRM1 P11229 1/20 0.44
TBXA2R P21731 1/20 0.44
GALR3 O60755 1/20 0.42
MAPT P10636 1/20 0.42
BLM P54132 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
ALOX15 P16050 1/20 0.32
TRPV1 Q8NER1 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17710616 0.83 TSHR (0.47) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL3198627 0.82 TSHR (0.39) TSHR
SCHEMBL11423320 0.82 TSHR (0.45) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL15745543 0.82 TSHR (0.45) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL14087829 0.79 TSHR (0.50) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL14087828 0.79 TSHR (0.50) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL3344615 0.77 MEN1 (0.33) TSHRSMN1; SMN2
SCHEMBL3391416 0.77 TSHR (0.41) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL2721450 0.77 TSHR (0.48) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL19225324 0.75 TSHR (0.47) TSHRCHRM2CHRM4CHRM1TBXA2R

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed