Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.34 |
| ▸ | APOBEC3A | P31941 | 1/20 | 0.34 |
| ▸ | APOBEC3G | Q9HC16 | 1/20 | 0.34 |
| ▸ | KDM6A | O15550 | 1/20 | 0.32 |
| ▸ | KDM4A | O75164 | 1/20 | 0.32 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
| ▸ | KDM5C | P41229 | 1/20 | 0.32 |
| ▸ | KDM2B | Q8NHM5 | 1/20 | 0.32 |
| ▸ | DOHH | Q9BU89 | 1/20 | 0.32 |
| ▸ | KDM2A | Q9Y2K7 | 1/20 | 0.32 |
| ▸ | CRBN | Q96SW2 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL254474 | 0.69 | — | — | |
| SCHEMBL5492050 | 0.65 | — | — | |
| SCHEMBL2965931 | 0.65 | — | — | |
| SCHEMBL4682733 | 0.65 | — | — | |
| SCHEMBL14620122 | 0.65 | — | — | |
| SCHEMBL23571871 | 0.65 | — | — | |
| SCHEMBL24112194 | 0.64 | ATAD2 (0.40) | KDM4EKDM6AKDM4ACYP2C9CYP2C19 | |
| SCHEMBL17052899 | 0.62 | — | — | |
| SCHEMBL4393848 | 0.62 | LPO (0.38) | KDM4EAPOBEC3AAPOBEC3GKDM6AKDM4A | |
| SCHEMBL16230662 | 0.62 | KDM4E (0.33) | KDM4EAPOBEC3AAPOBEC3GKDM6AKDM4A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9418890-B2 | Method for tuning a deposition rate during an atomic layer deposition process | APPLIED MATERIALS, INC. (US) | 2016-08-16 | — | — | US | disclosed |
| US-20140248772-A1 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2014-09-04 | — | — | US | disclosed |
| US-7682946-B2 | flowing a process gas through a conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, pulsing a organoruthanium precursor into the process gas and igniting a plasma of ammonia, N2, H2 from the process gas to deposit a material on the substrate (Ru, Ta, W ) | APPLIED MATERIALS, INC. (US) | 2010-03-23 | — | — | US | disclosed |
| US-20070128864-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070119371-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070119370-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |