SCHEMBL3361817

SCHEMBL3361817

CC(C)(C)c1ccc(CCO[C]=O)cc1

nearest known ligand 0.43

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 1/20 0.43
MITF O75030 1/20 0.43
GRIA4 P48058 1/20 0.41
ESRRG P62508 6/20 0.41
SLC13A5 Q86YT5 2/20 0.41
DAO P14920 1/20 0.41
ESRRB O95718 2/20 0.40
TP53 P04637 1/20 0.40
TSHR P16473 1/20 0.40
SIGMAR1 Q99720 1/20 0.39
GPR84 Q9NQS5 1/20 0.39
LMNA P02545 1/20 0.39
NR1H4 Q96RI1 2/20 0.38
EPHX2 P34913 1/20 0.38
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2095615 0.81 TAAR1 (0.50) DAO
SCHEMBL3365902 0.81 APP (0.47) KCNH2MITFESRRGESRRBTP53
SCHEMBL793588 0.78 KCNH2 (0.50) KCNH2MITFGRIA4ESRRGSLC13A5
SCHEMBL3366891 0.77 GRIA4 (0.42) KCNH2MITFGRIA4ESRRGSLC13A5
SCHEMBL1890232 0.76 KCNH2 (0.48) KCNH2MITFGRIA4ESRRGSLC13A5
SCHEMBL9532692 0.76 TAAR1 (0.52) SIGMAR1CA1CA2
SCHEMBL7456580 0.75 KCNH2 (0.59) KCNH2GRIA4ESRRGSLC13A5DAO
SCHEMBL5544719 0.75 CYP3A4 (0.39) GPR84
SCHEMBL5544629 0.75 GFER (0.52) TSHR
SCHEMBL28428894 0.75 TAAR1 (0.45)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1164434-B1 Radiation-sensitive resin composition JSR CORP (JP) 2010-10-06 EP disclosed
EP-1085379-B1 Radiation-sensitive resin composition JSR CORP (JP) 2006-01-04 EP disclosed
US-6964840-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-11-15 US disclosed
US-20040241580-A1 Radiation-sensitive resin composition NISHIMURA YUKIO (JP) 2004-12-02 US disclosed
US-6800414-B2 FLUOROPOLYMER JSR CORPORATION (JP) 2004-10-05 US disclosed
US-6770780-B1 QUATERNIZATION OF T-BUTYL BROMOACETATE WITH TRI(N-BUTYL)PHOSPHINE TO FORM PHOSPHONIUM SALT; REACTING WITH BASE TO FORM PHOSPHORUS YLIDE; FORMING 2,4,6-TRIS(3', 5'-DI-T-BUTYL-4'-HYDROXYBENZYL)METHYL-STYRENE; HYDROLYSIS JSR CORPORATION (JP) 2004-08-03 US disclosed
US-6753124-B2 AMPLIFIED POSITIVE PHOTORESISTS JSR CORPORATION (JP) 2004-06-22 US disclosed
US-6623907-B2 Chemical amplified photoresist JSR CORPORATION (JP) 2003-09-23 US disclosed
US-6482568-B1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-11-19 US disclosed
EP-1231205-A1 VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2002-08-14 EP disclosed
US-20020009668-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
US-20020009667-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
EP-1164434-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
EP-1162506-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-12 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
EP-1048983-A1 Radiation sensitive resin composition JSR Corporation (JP) 2000-11-02 EP disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed