⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27797527 | 0.92 | — | — | |
| SCHEMBL27728984 | 0.79 | — | — | |
| SCHEMBL3481994 | 0.78 | — | — | |
| SCHEMBL28500262 | 0.74 | — | — | |
| SCHEMBL22654115 | 0.74 | ALDH1A1 (0.31) | — | |
| SCHEMBL118889 | 0.73 | — | — | |
| SCHEMBL1585576 | 0.73 | — | — | |
| SCHEMBL27887210 | 0.71 | — | — | |
| SCHEMBL28492236 | 0.70 | — | — | |
| SCHEMBL8513650 | 0.70 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 103 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116041963-A | Waterproof wave-absorbing silica gel film with high tearing strength and low hardness and preparation method thereof | 成都佳驰电子科技股份有限公司 | 2023-05-02 | — | — | CN | claimed |
| CN-110627974-A | High-heat-resistance phosphorus-silicon flame retardant, and preparation method and application thereof | 铨盛聚碳科技股份有限公司 | 2019-12-31 | — | — | CN | claimed |
| CN-104593747-A | Dielectric Barrier Deposition Using Oxygen Containing Precursor | AIR PROD & CHEM | 2015-05-06 | — | — | CN | claimed |
| CN-102232125-B | Dielectric barrier deposition using oxygen-containing precursors | AIR PROD & CHEM | 2015-01-28 | — | — | CN | claimed |
| US-8637396-B2 | Dielectric barrier deposition using oxygen containing precursor | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2014-01-28 | — | — | US | claimed |
| US-8101236-B2 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-01-24 | — | — | US | claimed |
| CN-102232125-A | Dielectric barrier deposition using oxygen-containing precursors | AIR PROD & CHEM | 2011-11-02 | — | — | CN | claimed |
| EP-2376672-A1 | DIELECTRIC BARRIER DEPOSITION USING OXYGEN CONTAINING PRECURSOR | Air Products and Chemicals, Inc. (US) | 2011-10-19 | — | — | EP | claimed |
| CN-101226922-B | SICOH dielectric and its forming method | IBM | 2010-07-21 | — | — | CN | claimed |
| WO-2010065410-A1 | DIELECTRIC BARRIER DEPOSITION USING OXYGEN CONTAINING PRECURSOR | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-06-10 | — | — | WO | claimed |
| US-20090181178-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-07-16 | — | — | US | claimed |
| US-7491658-B2 | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-02-17 | — | — | US | claimed |
| US-20080265381-A1 | SiCOH DIELECTRIC | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-10-30 | — | — | US | claimed |
| CN-101226922-A | SICOH dielectric and its manufacturing method | IBM (US) | 2008-07-23 | — | — | CN | claimed |
| US-20070173071-A1 | SiCOH dielectric | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-07-26 | — | — | US | claimed |
| CN-1819180-A | Dielectric materialand method to make the same | IBM (US) | 2006-08-16 | — | — | CN | claimed |
| US-20060165891-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-07-27 | — | — | US | claimed |
| CN-1782125-A | Method for forming dielectric film and dielectric film | IBM (US) | 2006-06-07 | — | — | CN | claimed |
| US-20060079099-A1 | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-04-13 | — | — | US | claimed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | claimed |