SCHEMBL3481994

SCHEMBL3481994

C=C[SiH](C)OCCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27728984 0.85
SCHEMBL336530 0.78
SCHEMBL8513650 0.77
SCHEMBL28492236 0.77
SCHEMBL81525 0.76 TSHR (0.30)
SCHEMBL3481923 0.76
SCHEMBL22654115 0.75 ALDH1A1 (0.31)
SCHEMBL28488859 0.73
SCHEMBL3482349 0.72
SCHEMBL27797527 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112126064-B Preparation method of solid silicon carbide ceramic precursor 宁波曙翔新材料股份有限公司 2022-04-05 CN claimed
CN-112126067-B Preparation method and application of liquid silicon carbide ceramic precursor 宁波曙翔新材料股份有限公司 2022-04-05 CN claimed
CN-112094414-B Preparation method of novel liquid silicon carbide ceramic precursor 宁波曙翔新材料股份有限公司 2022-01-07 CN claimed
CN-112126067-A Preparation method and application of novel liquid silicon carbide ceramic precursor 宁波曙翔新材料股份有限公司 2020-12-25 CN claimed
CN-112126066-A Preparation method of polycarbosilane with high silicon-hydrogen content 宁波曙翔新材料股份有限公司 2020-12-25 CN claimed
CN-112126064-A Preparation method of novel solid silicon carbide ceramic precursor 长沙科航特种织造有限公司 2020-12-25 CN claimed
CN-112126065-A Preparation method of solid silicon carbide ceramic precursor 长沙科航特种织造有限公司 2020-12-25 CN claimed
CN-112094414-A Preparation method of novel liquid silicon carbide ceramic precursor 宁波曙翔新材料股份有限公司 2020-12-18 CN claimed
CN-111925386-A Preparation method of novel silicon carbide ceramic precursor 长沙科航特种织造有限公司 2020-11-13 CN claimed
CN-113968921-B Two-stage process for processing adhesives and related compositions 艾利丹尼森公司 2024-04-05 CN disclosed
CN-112279665-B Wave-absorbing ceramic precursor and preparation method and application thereof 浙江华茂航天科技股份有限公司 2022-06-07 CN disclosed
CN-112126067-B Preparation method and application of liquid silicon carbide ceramic precursor 宁波曙翔新材料股份有限公司 2022-04-05 CN disclosed
CN-112126064-B Preparation method of solid silicon carbide ceramic precursor 宁波曙翔新材料股份有限公司 2022-04-05 CN disclosed
CN-112280048-B Preparation method of polyborocarbosilane 浙江华茂航天科技股份有限公司 2022-02-18 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
EP-1051461-A2 FUEL COMPOSITIONS EMPLOYING CATALYST COMBUSTION STRUCTURE ORR, William C. (US) 2000-11-15 EP disclosed
WO-1999066009-A2 FUEL COMPOSITIONS EMPLOYING CATALYST COMBUSTION STRUCTURE ORR WILLIAM C (US) 1999-12-23 WO disclosed