⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL61895 | 0.82 | — | — | |
| SCHEMBL12097031 | 0.82 | — | — | |
| SCHEMBL12096967 | 0.82 | — | — | |
| SCHEMBL9897933 | 0.82 | — | — | |
| SCHEMBL511560 | 0.82 | — | — | |
| SCHEMBL15208458 | 0.82 | — | — | |
| SCHEMBL12097052 | 0.82 | — | — | |
| SCHEMBL12096966 | 0.82 | — | — | |
| SCHEMBL12096974 | 0.82 | — | — | |
| SCHEMBL19313 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 363 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12501628-B2 | Memory comprising conductive ferroelectric material in series with dielectric material | INTEL CORPORATION (US) | 2025-12-16 | — | — | US | claimed |
| US-20250359072-A1 | PHASE-CHANGE DEVICE STRUCTURE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | claimed |
| CN-119758491-A | Reconfigurable super-surface device, preparation method thereof and phase compensation method | 启元实验室 | 2025-04-04 | — | — | CN | claimed |
| CN-115696011-B | Phase change material-based electrically controllable color filter array and artificial vision system | 华中科技大学 | 2024-05-14 | — | — | CN | claimed |
| CN-117542601-B | High-toughness high-cerium-content neodymium-iron-boron magnet and preparation method thereof | 宁波中杭实业有限公司 | 2024-04-23 | — | — | CN | claimed |
| US-20240057346-A1 | PHASE-CHANGE DEVICE STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-02-15 | — | — | US | claimed |
| CN-117542601-A | High-toughness high-cerium-content neodymium-iron-boron magnet and preparation method thereof | 宁波中杭实业有限公司 | 2024-02-09 | — | — | CN | claimed |
| CN-117202768-A | Phase change device structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-12-08 | — | — | CN | claimed |
| CN-117154412-A | Double-layer programmable wave-front regulating and controlling super surface based on phase change material and preparation method thereof | 中国科学院物理研究所 | 2023-12-01 | — | — | CN | claimed |
| CN-116626992-A | Phase-change color photoresist and preparation method of pixelated color filter thereof | 华中科技大学 | 2023-08-22 | — | — | CN | claimed |
| US-20130005078-A1 | LOW TEMPERATURE DEPOSITION OF PHASE CHANGE MEMORY MATERIALS | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2013-01-03 | — | — | US | claimed |
| US-20120220076-A1 | Method of Making a Multicomponent Film | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-08-30 | — | — | US | claimed |
| US-20120034767-A1 | Method of Making a Multicomponent Film | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-02-09 | — | — | US | claimed |
| US-8022547-B2 | Non-volatile memory cells including small volume electrical contact regions | SEAGATE TECHNOLOGY LLC (US) | 2011-09-20 | — | — | US | claimed |
| CN-101984512-A | Composite phase change storage material and method for preparing composite phase change storage material film | SHANGHAI INST MICROSYS & INF | 2011-03-09 | — | — | CN | claimed |
| CN-101383397-B | Phase change memory element and manufacturing method thereof | IND TECH RES INST | 2010-06-02 | — | — | CN | claimed |
| CN-101383397-A | Phase change memory element and manufacturing method thereof | IND TECH RES INST (CN) | 2009-03-11 | — | — | CN | claimed |
| CN-101110237-A | Optical information storage medium | PRODISC TECHNOLOGY INC (CN) | 2008-01-23 | — | — | CN | claimed |
| US-6165687-A | Standard array, programmable image forming process | EASTMAN KODAK COMPANY (US) | 2000-12-26 | — | — | US | claimed |
| EP-0197531-B1 | THIN FILM TRANSISTOR FORMED ON INSULATING SUBSTRATE | HITACHI, LTD. (JP) | 1993-07-28 | — | — | EP | claimed |