⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3742266 | 0.87 | — | — | |
| SCHEMBL3746082 | 0.87 | — | — | |
| SCHEMBL27937523 | 0.82 | — | — | |
| SCHEMBL1226383 | 0.82 | — | — | |
| SCHEMBL131184 | 0.82 | — | — | |
| SCHEMBL338100 | 0.82 | — | — | |
| Water SCHEMBL3236568 | 0.67 | — | — | |
| SCHEMBL9897933 | 0.67 | — | — | |
| SCHEMBL10815456 | 0.67 | — | — | |
| SCHEMBL3889677 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 204 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12402545-B2 | Stacked cross-point phase change memory | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2025-08-26 | — | — | US | claimed |
| US-20250203878-A1 | ELECTROFORMED ENERGY-EFFICIENT PHASE CHANGE MEMORY DEVICE WITH THIN ACTIVE REGION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2025-06-19 | — | — | US | claimed |
| CN-116247119-B | Room temperature topological insulator heterojunction photoelectric detector of special dipole antenna | 中国科学院上海技术物理研究所 | 2025-06-13 | — | — | CN | claimed |
| CN-118472776-A | Preparation method of germanium bismuth tellurium saturable absorber device and optical fiber laser | 广东工业大学 | 2024-08-09 | — | — | CN | claimed |
| US-11963469-B2 | Phase change memory cell with an airgap to allow for the expansion and restriction of the PCM material | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2024-04-16 | — | — | US | claimed |
| CN-115072671-B | Germanium bismuth tellurium-based thermoelectric material and preparation method thereof | 中国科学院宁波材料技术与工程研究所 | 2024-02-06 | — | — | CN | claimed |
| CN-116746295-A | Phase change memory and method of manufacturing the same | 华为技术有限公司 | 2023-09-12 | — | — | CN | claimed |
| US-20230284542-A1 | PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION AND RESTRICTION OF THE PCM MATERIAL | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2023-09-07 | — | — | US | claimed |
| US-11690305-B2 | Phase change memory cell with an airgap to allow for the expansion and restriction of the PCM material | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2023-06-27 | — | — | US | claimed |
| WO-2023103555-A1 | STACKED CROSS-POINT PHASE CHANGE MEMORY | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2023-06-15 | — | — | WO | claimed |
| CN-115072671-A | Germanium bismuth tellurium based thermoelectric material and preparation method thereof | 中国科学院宁波材料技术与工程研究所 | 2022-09-20 | — | — | CN | claimed |
| US-10902910-B2 | Phase change memory (PCM) with gradual reset characteristics | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2021-01-26 | — | — | US | claimed |
| US-20200411087-A1 | PHASE CHANGE MEMORY (PCM) WITH GRADUAL RESET CHARACTERISTICS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2020-12-31 | — | — | US | claimed |
| EP-2698373-B1 | Precursors for gst films in ald/cvd processes | VERSUM MAT US LLC (US) | 2018-09-19 | — | — | EP | claimed |
| EP-3293193-A2 | PRECURSORS FOR GST FILMS IN ALD/CVD PROCESSES | Versum Materials US, LLC (US) | 2018-03-14 | — | — | EP | claimed |
| US-20150140790-A1 | Precursors For GST Films In ALD/CVD Processes | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-05-21 | — | — | US | claimed |
| EP-2698373-A2 | Precursors for gst films in ald/cvd processes | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2014-02-19 | — | — | EP | claimed |
| CN-103590017-A | Precursors for GST films in ALD/CVD processes | AIR PROD & CHEM | 2014-02-19 | — | — | CN | claimed |
| US-20130210217-A1 | Precursors for GST Films in ALD/CVD Processes | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-08-15 | — | — | US | claimed |
| US-20100096609-A1 | PHASE CHANGE MEMORY DEVICE HAVING A LAYERED PHASE CHANGE LAYER COMPOSED OF MULTIPLE PHASE CHANGE MATERIALS AND METHOD FOR MANUFACTURING THE SAME | HYNIX SEMICONDUCTOR INC. (KR) | 2010-04-22 | — | — | US | claimed |